2SC4688 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC4688
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 55 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 105 pF
Forward Current Transfer Ratio (hFE), MIN: 55
Noise Figure, dB: -
Package: ISO247
2SC4688 Transistor Equivalent Substitute - Cross-Reference Search
2SC4688 Datasheet (PDF)
2sc4688.pdf
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Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4688 DESCRIPTION With TO-3PFM package Complement to type 2SA1803 APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PFM) and symbol Maximum absolu
2sc4688.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4688DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 5ACE(sat) CComplement to Type 2SA1803100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier ap
2sc4684.pdf
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2SC4684 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4684 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications High DC current gain : h = 800 to 3200 (V = 2 V, I = 0.5 A) FE (1) CE C: h = 250 (V = 2 V, I = 4 A) FE (2) CE C Low collector saturation voltage : V = 0.5 V (max) (I = 4 A, I = 40 mA) CE (sat) C B High power dissipation : P
2sc4681.pdf
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2SC4681 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4681 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications Excellent hFE linearity : h = 200 to 600 (V = 2 V, I = 0.5 A) FE (1) CE C: h = 140 (min), 200 (typ.) (V = 2 V, I = 3 A) FE (2) CE C Low collector saturation voltage : V = 0.5 V (max) (I = 3 A, I = 60 mA) CE (sat) C B Compleme
2sc4686 2sc4686a.pdf
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2SC4686,2SC4686A TOSHIBA Transistor Silicon NPN Triple Diffused Planar Type 2SC4686, 2SC4686A TV Dynamic Focus Applications Unit: mmHigh-Voltage Switching Applications High-Voltage Amplifier Applications High voltage: VCEO = 1200 V (max) Small collector output capacitance: Cob = 2.2 pF (typ.) (VCB = 100 V) Maximum Ratings (Tc = 25C) Characteristics Symbol Rating U
2sc4680.pdf
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2SC4680Silicon NPN EpitaxialApplicationVHF / UHF high frequency switchingFeatures Low Ron and high performance for RF switch. Capable of high density mounting.OutlineMPAK311. Emitter2. Base23. Collector2SC4680Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 12 VCollector to emitter voltage VCEO 8VEmitter t
2sc4689.pdf
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Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4689 DESCRIPTION With TO-3PFM package Complementary to 2SA1804 Recommend for 55W high fidelity audio frequency amplifier APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PFM) and symbol Absolute maximum ratings(Ta=
2sc4687.pdf
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JMnic Product SpecificationSilicon NPN Power Transistors 2SC4687 DESCRIPTION With TO-3PN package High breakdown voltage Fast switching speed Wide area of safe operation APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute ma
2sc4680.pdf
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SMD Type TransistorsNPN Transistors2SC4680SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=8V+0.1+0.050.95 -0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 12 Collect
2sc4689.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4689DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 6ACE(sat) CComplement to Type 2SA1804100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier a
2sc4687.pdf
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INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4687DESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose applicationsA
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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