All Transistors. 2SC4759 Datasheet

 

2SC4759 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC4759

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 600 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 1 MHz

Collector Capacitance (Cc): 290 pF

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: -

Package: ISO218

2SC4759 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC4759 Datasheet (PDF)

1.1. 2sc4759.pdf Size:302K _inchange_semiconductor

2SC4759
2SC4759

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4759 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching power supply output applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VA

4.1. 2sc4754.pdf Size:217K _toshiba

2SC4759
2SC4759



4.2. 2sc4755.pdf Size:42K _panasonic

2SC4759
2SC4759

Transistor 2SC4755 Silicon NPN epitaxial planer type For high speed switching Unit: mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High-speed switching. 1 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta=25?C) Param

 4.3. 2sc4755 e.pdf Size:46K _panasonic

2SC4759
2SC4759

Transistor 2SC4755 Silicon NPN epitaxial planer type For high speed switching Unit: mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High-speed switching. 1 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2 packing. Absolute Maximum Ratings (Ta=25?C) Param

4.4. 2sc4757.pdf Size:334K _inchange_semiconductor

2SC4759
2SC4759

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4757 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching power supply output applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VA

 4.5. 2sc4758.pdf Size:336K _inchange_semiconductor

2SC4759
2SC4759

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4758 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching power supply output applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VA

Datasheet: 2SC4746 , 2SC4746A , 2SC4747 , 2SC474H , 2SC475 , 2SC4754 , 2SC4757 , 2SC4758 , 2N60C , 2SC476 , 2SC4760 , 2SC4761 , 2SC4762 , 2SC4763 , 2SC4764 , 2SC4765 , 2SC4766 .

 
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