2SC5039 Specs and Replacement
Type Designator: 2SC5039
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 85 W
Maximum Collector-Base Voltage |Vcb|: 800 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
Package: TO220
- BJT ⓘ Cross-Reference Search
2SC5039 datasheet
8.3. Size:60K panasonic
2sc5036.pdf 
Power Transistors 2SC5036, 2SC5036A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 4.6 0.2 Features 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, ... See More ⇒
8.4. Size:59K panasonic
2sc5034.pdf
Power Transistors 2SC5034 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 High collector to emitter VCEO High-speed switching Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one screw 2.6 0.1 1.2 0.15 1.45 0.15 0.7 0.1 Absol... See More ⇒
8.5. Size:59K panasonic
2sc5032.pdf
Power Transistors 2SC5032 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 4.6 0.2 9.9 0.3 2.9 0.2 Features 3.2 0.1 High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE 2.6 0.1 Full-pack package with outstanding insulatio... See More ⇒
8.6. Size:78K panasonic
2sc5037.pdf
Power Transistors 2SC5037, 2SC5037A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 4.6 0.2 Features 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, ... See More ⇒
8.7. Size:62K panasonic
2sc5035.pdf
Power Transistors 2SC5035 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm Features 4.6 0.2 High-speed switching 9.9 0.3 2.9 0.2 3.2 0.1 High collector to base voltage VCBO Low collector to emitter saturation voltage VCE(sat) Full-pack package with outstanding insulation, which can be in- stalled to the heat sink with one ... See More ⇒
Detailed specifications: 2SC5030R, 2SC5031, 2SC5031N, 2SC5031O, 2SC5031R, 2SC5034, 2SC5035, 2SC5036, BDT88, 2SC503D, 2SC503G, 2SC503O, 2SC503Y, 2SC504, 2SC5047, 2SC504G, 2SC504O
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