2SC511O Specs and Replacement
Type Designator: 2SC511O
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 40 max pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO39
2SC511O Substitution
- BJT ⓘ Cross-Reference Search
2SC511O datasheet
2sc500 2sc501 2sc502 2sc503 2sc504 2sc505 2sc506 2sc507 2sc508 2sc509 2sc510 2sc511.pdf 
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2SC5111FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5111FT For VCO Application Unit mm Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 30 mA Collector current IC 60 mA Collector power dissipation PC 100 mW Junction tempera... See More ⇒
2SC5111 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5111 For VCO Application Unit mm Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 30 mA Collector current IC 60 mA Collector power dissipation PC 100 mW Junction temperature... See More ⇒
Detailed specifications: 2SC509Y, 2SC51, 2SC510, 2SC5105, 2SC510M, 2SC510O, 2SC510R, 2SC511, 2SC4793, 2SC511R, 2SC512, 2SC5120, 2SC512O, 2SC512R, 2SC513, 2SC5130, 2SC5132A
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