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2SC5130 Specs and Replacement

Type Designator: 2SC5130

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 20 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO220F FM20

 2SC5130 Substitution

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2SC5130 datasheet

 ..1. Size:24K  sanken-ele

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2SC5130

2SC5130 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SC5130 Unit Symbol Conditions 2SC5130 Unit 0.2 4.2 0.2 10.1 c0.5 VCBO 600 V ICBO VCB=500V 100max A 2.8 ... See More ⇒

 ..2. Size:172K  inchange semiconductor

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2SC5130

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 8.2. Size:23K  hitachi

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2SC5130

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Detailed specifications: 2SC511, 2SC511O, 2SC511R, 2SC512, 2SC5120, 2SC512O, 2SC512R, 2SC513, BC546, 2SC5132A, 2SC513O, 2SC513R, 2SC514, 2SC515, 2SC515A, 2SC516, 2SC516A

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