2SC526M Datasheet and Replacement

   Type Designator: 2SC526M
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.75 W
   Maximum Collector-Base Voltage |Vcb|: 165 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.055 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 125 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO5

2SC526M Substitution

- BJT ⓘ Cross-Reference Search

2SC526M Datasheet (PDF)

8.1. Size:181K toshiba
2sc5266a.pdf pdf_icon

8.2. Size:182K toshiba
2sc5261.pdf pdf_icon

8.3. Size:164K toshiba
2sc5266.pdf pdf_icon

8.4. Size:126K toshiba
2sc5262.pdf pdf_icon

8.5. Size:220K toshiba
2sc5260.pdf pdf_icon

8.6. Size:103K toshiba
2sc5261ft.pdf pdf_icon

8.7. Size:103K toshiba
2sc5263.pdf pdf_icon

8.8. Size:463K sanyo
2sc5264.pdf pdf_icon

Ordering number:ENN5287NPN Triple Diffused Planar Silicon Transistor2SC5264Inverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1000V).unit:mm High reliability (Adoption of HVP process).2079C Adoption of MBIT process.[2SC5264]4.510.02.83.20.91.20.70.751 : Base1 2 32 : Collector3 : Emitter2.55 2.55SANYO :

8.9. Size:42K sanyo
2sc5264ls.pdf pdf_icon

Ordering number:ENN5287ANPN Triple Diffused Planar Silicon Transistor2SC5264LSInverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1000V).unit:mm High reliability (Adoption of HVP process).2079D Adoption of MBIT process.[2SC5264]10.0 4.53.22.80.91.2 1.20.75 0.71 : Base1 2 32 : Collector3 : Emitter2.55 2.55Spe

8.10. Size:112K sanyo
2sc5265.pdf pdf_icon

Ordering number:EN5321NPN Triple Diffused Planar Silicon Transistor2SC5265Inverter-controlled Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1200V).unit:mm High reliability (Adoption of HVP process).2079B Adoption of MBIT process.[2SC5265]4.510.02.83.20.90.71.20.751 : Base1 2 32 : Collector3 : Emitter2.55 2.55

8.11. Size:31K sanyo
2sc5265ls.pdf pdf_icon

Ordering number : ENN5321A2SC5265LSNPN Triple Diffused Planar Silicon Transistor2SC5265LSInverter-Controlled Lighting ApplicationsFeaturesPackage Dimensions High breakdown voltage(VCBO=1200V).unit : mm High reliability(Adoption of HVP process).2079D Adoption of MBIT process.[2SC5265LS]10.0 4.53.22.80.91.2 1.20.75 0.71 2 31 : Base2 : Collector

8.12. Size:209K inchange semiconductor
2sc5265.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC5265DESCRIPTIONHigh Breakdown Voltage-(Vcb=1200V) High ReliabilityAdoption of MBIT processMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSInverter-controlledLightingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1200 VCBOV Collector-E

Datasheet: 2SC524O , 2SC524R , 2SC525 , 2SC5250 , 2SC5251 , 2SC525O , 2SC525R , 2SC526 , TIP36C , 2SC527 , 2SC5271 , 2SC5273 , 2SC528 , 2SC5287 , 2SC529 , 2SC529A , 2SC53 .