2SC531 Specs and Replacement
Type Designator: 2SC531
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 115 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO92
- BJT ⓘ Cross-Reference Search
2SC531 datasheet
0.1. Size:121K toshiba
2sc5317.pdf 

2SC5317 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5317 VHF UHF Band Low Noise Amplifier Applications Unit mm (chip fT = 16 GHz series) Low noise figure NF = 1.3dB (f = 2 GHz) High gain Ga = 9dB (f = 2 GHz) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 8 V Collector-emitter voltage VCEO 5 V Emi... See More ⇒
0.4. Size:169K toshiba
2sc5319.pdf 

2SC5319 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5319 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure NF = 1.3dB (f = 2 GHz) High gain Ga = 11.5dB (f = 2 GHz) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 8 V Collector-emitter voltage VCEO 5 V Emitter-base voltage VEBO 1.5... See More ⇒
0.6. Size:125K toshiba
2sc5317ft.pdf 

2SC5317FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5317FT VHF UHF Band Low Noise Amplifier Applications Unit mm (chip fT = 16 GHz series) Low noise figure NF = 1.3dB (f = 2 GHz) High gain S 2 = 9dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 8 V Collector-emitter voltage V... See More ⇒
0.7. Size:44K sanyo
2sa1973 2sc5310.pdf 

Ordering number ENN5613 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1973/2SC5310 DC/DC Converter Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit mm Large current capacitance. 2018B Low collector-to-emitter saturation voltage. [2SA1973/2SC5310] High-speed switching. 0.4 Ultrasmall package facilitates miniaturization in end 0.16... See More ⇒
0.8. Size:1137K kexin
2sc5310.pdf 

SMD Type Transistors NPN Transistors 2SC5310 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=1A 1 2 Collector Emitter Voltage VCEO=25V +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complement to 2SA1973 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Bas... See More ⇒
0.9. Size:353K kexin
2sc5315.pdf 

SMD Type Transistors NPN Transistors 2SC5315 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=20mA Collector Emitter Voltage VCEO=5V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 8 Collecto... See More ⇒
Detailed specifications: 2SC5273, 2SC528, 2SC5287, 2SC529, 2SC529A, 2SC53, 2SC530, 2SC530A, TIP41C, 2SC531A, 2SC532, 2SC533, 2SC5333, 2SC534, 2SC535, 2SC535P, 2SC536
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