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2SC536P Specs and Replacement


   Type Designator: 2SC536P
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 115 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO92

 2SC536P Transistor Equivalent Substitute - Cross-Reference Search

   

2SC536P detailed specifications

 8.1. Size:116K  toshiba
2sc5360.pdf pdf_icon

2SC536P

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 8.2. Size:187K  toshiba
2sc5368.pdf pdf_icon

2SC536P

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 8.3. Size:206K  toshiba
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2SC536P

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 8.4. Size:36K  sanyo
2sa608n 2sc536n.pdf pdf_icon

2SC536P

Ordering number ENN6324A 2SA608N / 2SC536N PNP / NPN Epitaxial Planar Silicon Transistors 2SA608N / 2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Capable of being used in the low frequency to high unit mm frequency range. 2205 [2SA608N / 2SC536N] 4.5 Features 3.7 3.5 Large current capacity and wide ASO. 0.5 0.45 0.44 1 ... See More ⇒

Detailed specifications: 2SC533 , 2SC5333 , 2SC534 , 2SC535 , 2SC535P , 2SC536 , 2SC536KNP , 2SC536NP , C5198 , 2SC536SP , 2SC537 , 2SC5370O , 2SC5370R , 2SC5370Y , 2SC537P , 2SC538 , 2SC538A .

Keywords - 2SC536P transistor specs

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