2SC57 Datasheet and Replacement

2SC5784 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5784 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications High DC current gain: hFE = 400 to 1000 (I = 0.15 A) C Low collector-emitter saturation voltage: V = 0.12 V (max) CE (sat) High-speed switching: t = 45 ns (typ.) fMaximum Ratings (Ta == 25C) ==

2SC5748 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5748 Horizontal Deflection Output for HDTV&Digital TV. Unit: mm High voltage: VCBO = 2000 V Low saturation voltage: V = 3 V (max) CE (sat) High speed: t = 0.15 s (typ.) fMaximum Ratings (Tc == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 2000 VCollector-emi

2SC5703 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (I = 0.5 A) C Low collector-emitter saturation voltage: V = 0.12 V (max) CE (sat) High-speed switching: t = 55 ns (typ.) fMaximum Ratings (T

2SC5738 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5738 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications High DC current gain: hFE = 400 to 1000 (I = 0.5 A) C Low collector-emitter saturation voltage: V = 0.15 V (max) CE (sat) High-speed switching: t = 90 ns (typ.) fMaximum Ratings (Ta == 25C) ==

2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS Unit: mm STOROBO FLASH APPLICATIONS Low Saturation Voltage: VCE (sat) (1) = 0.27 V (max.) (I = 3 A/I = 60 mA) C BMaximum Ratings (Ta == 25C) ==Characteristic Symbol Rating UnitCollector-Base voltage VCBO 15 VCollector-Emitter voltage VCEO 10 VEmitter-Ba

2SC5716 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5716 Horizontal Deflection Output for High Resolution Display, Unit: mm Color TV High voltage: V = 1700 V CBO High speed: t (2) = 0.2 s (typ.) f Collector metal (fin) is fully covered with mold resin. Maximum Ratings (Tc == 25C) ==Characteristics Symbol Rating UnitCollector-base vo

2SC5720 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5720 MEDIUM POWER AMPLIFIER APPLICATIONS Unit: mm STOROBO FLASH APPLICATIONS Low Saturation Voltage: VCE (sat) (1) = 0.25 V (max) (I = 3 A/I = 60 mA) C BMaximum Ratings (Ta == 25C) ==Characteristic Symbol Rating UnitCollector-Base voltage VCBO 15 VCollector-Emitter voltage VCEO 10 VEmitter-Bas

2SC5714 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5714 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (I = 0.5 A) C Low collector-emitter saturation voltage: V = 0.15 V (max) CE (sat) High-speed switching: t = 90 ns (typ.) fMaximum Ratings (T

2SC5713 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5713 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (I = 0.5 A) C Low collector-emitter saturation voltage: V = 0.15 V (max) CE (sat) High-speed switching: t = 50 ns (typ.) fMaximum Ratings (T

2SC5712 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5712 High-Speed Switching Applications Unit: mmDC-DC Converter Applications DC-AC Converter Applications High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) High-speed switching: tf = 120 ns (typ.) Absolute Maximum Ratings (Ta = 25C) C

2SC5755 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5755 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (I = 0.2 A) C Low collector-emitter saturation voltage: V = 0.12 V (max) CE (sat) High-speed switching: t = 25 ns (typ.) fMaximum Ratings (Ta == 25C) ==Char

2SC5717 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5717 Horizontal Deflection Output for Super High Resolution Unit: mm Display, Color TV, Digital TV. High Speed Switching Applications. High voltage: VCBO = 1500 V Low saturation voltage: V = 3 V (max) CE (sat) High speed: t (2) = 0.1 s (typ.) fMaximum Ratings (Tc == 25C) ==Charact

2SC5785 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5785 Industrial Applications High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 400 to 1000 (I = 0.2 A) C Low collector-emitter saturation voltage: V = 0.12 V (max) CE (sat) High-speed switching: t = 25 ns (typ.) fMaximum Ratings (T

Ordering number : ENN69922SC5778NPN Triple Diffused Planar Silicon Transistor2SC5778Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1600V).2174A High reliability(Adoption of HVP process). Adoption of MBIT process.[2SC5778] On-chip damper diode.5.6

Ordering number : ENN6913A2SA2040 / 2SC5707PNP / NPN Epitaxial Planar Silicon Transistors2SA2040 / 2SC5707High Current Switching ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash.Features Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switchin

Ordering number : ENN69152SA2044 / 2SC5710PNP / NPN Epitaxial Planar Silicon Transistors2SA2044 / 2SC5710DC / DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit : mm2045B[2SA2044 / 2SC5710]Features6.5 Adoption of FBET and MBIT processes.2.35.00.54 Large current capacitance. Low collecto

Ordering number : ENN69142SA2043 / 2SC5709PNP / NPN Epitaxial Planar Silicon Transistors2SA2043 / 2SC5709DC / DC Converter ApplicationsApplications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit : mm2045B[2SA2043 / 2SC5709]Features6.5 Adoption of FBET and MBIT processes. 2.35.00.54 Large current capacitance. Low collector

Ordering number : ENN69912SC5777NPN Triple Diffused Planar Silicon Transistor2SC5777Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage (VCBO=1600V).2174A High reliability (Adoption of HVP process).[2SC5777] Adoption of MBIT process.5.63.4 On-chip damper d

No. N74512SC5793N7451No.31504 NPN CRT 2SC5793 VCBO=1600V HVP MBIT Absolute Maxi

Ordering number : ENN6971A2SC5764NPN Triple Diffused Planar Silicon Transistor2SC5764Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage. unit : mm High reliability. 2041A High-speed switching.[2SC5764] Wide ASO.4.510.02.8 Adoption of MBIT process.3.22.41.61.20.70.751 2 31 : Base2.55 2.552 : Collector

Ordering number : ENN69882SA2063 / 2SC5775PNP Epitaxial Planar Silicon TransistorNPN Triple Diffused Planar Silicon Transistor2SA2063 / 2SC5775160V / 12A, AF90W Output ApplicationsFeatures Package Dimensions Large current capacitance. unit : mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process.[2SA2063 / 2SC5775]15.63.24.814.02

Ordering number : ENN69872SA2062 / 2SC5774PNP Epitaxial Planar Silicon TransistorNPN Triple Diffused Planar Silicon Transistor2SA2062 / 2SC5774140V / 10A, AF 70W Output ApplicationsFeatures Package Dimensions Large current capacitance. unit : mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process.[2SA2062 / 2SC5774]15.63.24.814.0

Ordering number : ENN69942SC5792NPN Triple Diffused Planar Silicon Transistor2SC5792Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1600V).2174A High reliability(Adoption of HVP process).[2SC5792] Adoption of MBIT process.5.63.416.03.12.82.0 2.

Ordering number : ENN6989A2SC5763NPN Triple Diffused Planar Silicon Transistor2SC5763Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage. unit : mm High reliability. 2010C High-speed switching.[2SC5763] Wide ASO.10.24.5 Adoption of MBIT process. 3.65.11.31.20.80.41 : Base2 : Collector1 2 33 : EmitterSANY

Ordering number : ENN69902SC5776NPN Triple Diffused Planar Silicon Transistor2SC5776Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage (VCBO=1600V).2174A High reliability (Adoption of HVP process).[2SC5776] Adoption of MBIT process.5.63.416.0 On-chip da

Ordering number : ENN69932SC5791NPN Triple Diffused Planar Silicon Transistor2SC5791Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1600V).2174A High reliability(Adoption of HVP process).[2SC5791] Adoption of MBIT process.5.63.416.03.12.82.0 2.

Ordering number : ENN6912B2SA2039 / 2SC5706PNP / NPN Epitaxial Planar Silicon Transistors2SA2039 / 2SC5706High Current Switching ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash.Features Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switchin

Ordering number : ENN69122SA2039 / 2SC5706PNP / NPN Epitaxial Planar Silicon Transistors2SA2039 / 2SC5706High Current Switching ApplicationsFeatures Package Dimensions DC-DC converter, relay drivers, lamp drivers, unit : mmmotor drivers, strobes. 2045BFeatures[2SA2039 / 2SC5706] Adoption of FBET, MBIT process.6.52.35.0 Large current capacitance.0.54

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

DATA SHEETNPN SILICON RF TRANSISTOR2SC5751NPN SILICON RF TRANSISTOR FORMEDIUM OUTPUT POWER AMPLIFICATION (30 mW)FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLDFEATURES Ideal for medium output power amplification PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm HFT3 technology (fT = 12 GHz) adopted High reliability through use of gold electrodes Fla

DATA SHEETNPN SILICON RF TRANSISTOR2SC5754NPN SILICON RF TRANSISTOR FORMEDIUM OUTPUT POWER AMPLIFICATION (0.4 W)FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)FEATURES Ideal for 460 MHz to 2.4 GHz medium output power amplification PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm High collector efficiency: C = 60% UHS0-HV technology (fT = 25 GHz

DATA SHEETNPN SILICON RF TRANSISTOR2SC5746NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISE3-PIN LEAD-LESS MINIMOLDFEATURES Low voltage operation, low phase distortion Ideal for OSC applications 3-pin lead-less minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5746 50 pcs (Non reel) 8 mm wide embossed taping2SC5746-T3 10 kpcs/re

DATA SHEETNPN SILICON RF TRANSISTOR2SC5753NPN SILICON RF TRANSISTOR FORMEDIUM OUTPUT POWER AMPLIFICATION (60 mW)FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLDFEATURES Ideal for medium output power amplification PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm HFT3 technology (fT = 12 GHz) adopted High reliability through use of gold electrodes Fla

DATA SHEETNPN SILICON RF TRANSISTOR2SC5745NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISEFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Low voltage operation, low phase distortion Ideal for OSC applications Flat-lead 3-pin thin-type ultra super minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5745 50 pcs (Non reel) 8 mm

DATA SHEETNPN SILICON RF TRANSISTOR2SC5752NPN SILICON RF TRANSISTOR FORMEDIUM OUTPUT POWER AMPLIFICATION (60 mW)4-PIN SUPER MINIMOLDFEATURES Ideal for medium output power amplification PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm HFT3 technology (fT = 12 GHz) adopted High reliability through use of gold electrodes 4-pin super minimold pa

DATA SHEETNPN SILICON RF TRANSISTOR2SC5787NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISE3-PIN LEAD-LESS MINIMOLDFEATURES Ideal for 3 GHz or higher OSC applications Low noise, high gainfT = 20 GHz TYP., S21e2 = 13 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHzNF = 1.4 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt UHS0 technology (fT = 25 GHz) adopte

DATA SHEETNPN SILICON GERMANIUM RF TRANSISTOR2SC5761NPN SiGe RF TRANSISTOR FORLOW NOISE HIGH-GAIN AMPLIFICATIONFLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)FEATURES Ideal for low noise high-gain amplificationNF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz SiGe technology (fT

DATA SHEETNPN SILICON RF TRANSISTOR2SC5704NPN SILICON RF TRANSISTOR FORLOW NOISE HIGH-GAIN AMPLIFICATION6-PIN LEAD-LESS MINIMOLDFEATURES Ideal for low noise high-gain amplification and oscillation at 3 GHz or overNF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz High fT: fT = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GHz 6-pin lead-less mini

DATA SHEETNPN SILICON RF TRANSISTOR2SC5786NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISEFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Ideal for 3 GHz or higher OSC applications Low noise, high gainfT = 20 GHz TYP., S21e2 = 12 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHzNF = 1.4 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt UHS0 technolog

DATA SHEETNPN SILICON RF TRANSISTOR2SC5737NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISEFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Low voltage operation, low phase distortion Ideal for VCO applications Flat-lead 3-pin thin-type ultra super minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5737 50 pcs (Non reel) 8 mm

DATA SHEETNPN SILICON RF TRANSISTOR2SC5736NPN SILICON RF TRANSISTOR FORHIGH-FREQUENCY LOW NOISEFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Low voltage operation, low phase distortion Ideal for OSC applications Flat-lead 3-pin thin-type ultra super minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5736 50 pcs (Non reel) 8 mm

DATA SHEETNPN SILICON RF TRANSISTOR2SC5750NPN SILICON RF TRANSISTOR FORMEDIUM OUTPUT POWER AMPLIFICATION (30 mW)4-PIN SUPER MINIMOLDFEATURES Ideal for medium output power amplification PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm HFT3 technology (fT = 12 GHz) adopted High reliability through use of gold electrodes 4-pin super minimold pa

2SC5730K Transistors Medium power transistor (30V, 1A) 2SC5730K External dimensions (Unit : mm) Features 1) High speed switching. SMT3(Tf : Typ. : 50ns at IC = 1.0A) (SC-59)2) Low saturation voltage, typically :(Typ. 150mV at IC = 500mA, IB = 50mA) 1.63) Strong discharge power for inductive load and 2.8capacitance load. (1) Emitter4) Complements th

2SC5730 Transistor Medium power transistor (30V, 1.0A) 2SC5730 External dimensions (Units : mm) Features 1) High speed switching. (Tf : Typ. : 35ns at IC = 1.0A) 2.8TSMT31.62) Low saturation voltage, typically (Typ. : 150mV at IC = 500mA, IB = 50mA) 3) Strong discharge power for inductive load and capacitance load. (1) Base(2) Emitter4) Complements the 2SA2048

Ordering number : EN6913B2SA2040/2SC5707Bipolar Transistorhttp://onsemi.com(-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al

Ordering number : EN6913B2SA2040/2SC5707Bipolar Transistorhttp://onsemi.com(-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al

Ordering number : EN6912D2SA2039/2SC5706Bipolar Transistorhttp://onsemi.com(-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al

Ordering number : EN6912D2SA2039/2SC5706Bipolar Transistorhttp://onsemi.com(-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al

Power Transistors2SC5788Silicon NPN epitaxial planar typeUnit: mmPower supply for Audio & Visual equipments10.00.2 5.00.11.00.2such as TVs and VCRsIndustrial equipments such as DC-DC converters Features 1.20.1C 1.0 High-speed switching (tstg: storage time/tf: fall time is short)1.480.22.250.2 Low collector to emitter saturation voltage VCE(sat)

Transistors2SC5725Silicon NPN epitaxial planar typeFor DC-DC converterUnit: mm0.40+0.100.050.16+0.100.06 Features3 Low collector-emitter saturation voltage VCE(sat) Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing1 2(0.95) (0.95)1.90.12.90+0.200.05 Absolute Maximum Ratings Ta = 25

Power Transistors2SC5739Silicon NPN epitaxial planar typeUnit: mm4.60.2Power supply for Audio & Visual equipments 9.90.32.90.2such as TVs and VCRs 3.20.1Industrial equipments such as DC-DC converters Features High-speed switching (tstg: storage time/tf: fall time is short)1.40.2 Low collector-emitter saturation voltage VCE(sat) 2.60.11.60.2

Power Transistors2SC5779Silicon NPN epitaxial planar typeUnit: mm4.60.2Power supply for Audio & Visual equipments 9.90.32.90.2such as TVs and VCRs 3.20.1Industrial equipments such as DC-DC converters Features High-speed switching (tstg: storage time/tf: fall time is short)1.40.2 Low collector-emitter saturation voltage VCE(sat) 2.60.11.60.2

UNISONIC TECHNOLOGIES CO., LTD 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER AMPLIFIER STROBO FLASH DESCRIPTION medium power amplifier applications strobo flash applications FEATURES * Low Saturation Voltage: VCE(sat) = 0.27 V (max.), (Ic = 3A / IB =60 mA) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3

2SC5700Silicon NPN EpitaxialVHF/UHF wide band amplifierADE-208-1435 (Z)Rev.0Jul. 2001Features High power gain low noise figure at low power operation:|S21|2 = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)OutlineMFPAK3121. Emitter2. Base3. CollectorNote: Marking is WB.2SC5700Absolute Maximum Ratings(Ta = 25 C)Parameter Sym

2SC5702Silicon NPN EpitaxialHigh Frequency Amplifier / OscillatorADE-208-1414 (Z)1st. EditionMar. 2001Features High gain bandwidth productfT = 8 GHz typ. High power gain and low noise figure ;PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHzOutlineMFPAK3121. Emitter2. Base3. CollectorNote: Marking is ZS-.2SC5702Absolute Maximum Ratings (Ta

2SC5773Silicon NPN EpitaxialUHF / VHF wide band amplifierADE-208-1391(Z)Preliminary 1st. EditionMar. 2001Features High gain bandwidth productfT = 10.8 GHz typ. High power gain and low noise figure ;PG = 11.9 dB typ., NF = 1.1 dB typ. at f = 900 MHzOutlineMPAK311. Emitter22. Base3. CollectorNote: Marking is JR-.This data sheet contains tentativ

2SC5757Silicon NPN EpitaxialVHF/UHF wide band amplifierADE-208-1396D (Z)Rev.4Jul. 2001Features Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm)OutlineMFPAK3121. Emitter2. Base3. CollectorNote: Marking is WE.2SC5757Absolute Maximum Ratings(Ta = 25 C)Item Symbol Ratings UnitCollector to base voltage VCBO 10 VCollector to emitter voltage

2SC5759Silicon NPN EpitaxialUHF / VHF wide band amplifierADE-208-1389 (Z)Preliminary 1st. EditionMar. 2001Features High gain bandwidth productfT = 10.6 GHz typ. High power gain and low noise figure ;PG = 11.5B typ. , NF = 1.1 dB typ. at f = 900 MHz Very low distortionOutput IP3 (800 MHz) = 36 dBm typ.OutlineCMPAK-423141. Collector2. Collector3.

2SC5772Silicon NPN EpitaxialUHF / VHF wide band amplifierADE-208-1390 (Z)Preliminary 1st. EditionMar. 2001Features High gain bandwidth productfT = 9 GHz typ. High power gain and low noise figure ;PG = 13 dB typ., NF = 1.1 dB typ. at f = 900 MHzOutlineMPAK311. Emitter22. Base3. CollectorNote: Marking is FR-.This data sheet contains tentative sp

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SC5785 TRANSISTORNPN SOT-89-3L 1 2 3 FEATURES 1. BASE High-Speed Switching Applications1 DC-DC Converter Applications2. COLLETOR 2 Strobe Applications3 3. EMITTER Marking: 3E MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVC

2SC5706NPN EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free1.BASE32.COLLECTOR23.EMITTER 1Features:* Large current capacitanceD-PAK(TO-252)* Low collector-to-emitter saturation voltage* High-speed switching* High allowable dissipationMechanical Data:* Case : Molded Plastic* Weight : 0.925 gramsABSOLUTE MAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitVCBO80 V

SMD Type TransistorsNPN Transistors2SC5706TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features4 Collector Current Capability IC=5A Collector Emitter Voltage VCEO=80V0.127 High-speed switching. +0.10.80-0.1max Low collector-to-emitter saturation voltage High allowable power dissipation.+ 0.11 Base2.3 0

SMD Type TransistorsNPN Transistors2SC5773SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features Collector Current Capability IC=80mA1 2 Collector Emitter Voltage VCEO=6V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collect

SMD Type TransistorsNPN Transistors2SC57851.70 0.1 Features High DC current gain: hFE = 400 to 1000 Low collector-emitter saturation voltage High-speed switching0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 10 V Emitte

SMD Type TransistorsNPN Transistors2SC5772SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=75mA1 2 Collector Emitter Voltage VCEO=9V+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto

isc Silicon NPN Power Transistor 2SC5706DESCRIPTIONLarge current capacitanceHigh-speed switching100% avalanche testedHigh allowable power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationComplementary to 2SA2039APPLICATIONSDC/DC converter,relay drivers,lamp drivers,motordriversABSOLUTE MAXIMUM RATINGS(T =25)a

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC5764DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOFast Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulators applications.ABSOLUTE MAXIMUM RA

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC5763DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOFast Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulators applications.ABSOLUTE MAXIMUM RA

isc Silicon NPN Power Transistor 2SC5707DESCRIPTIONLarge current capacitanceHigh-speed switching100% avalanche testedLow collector-to-emitter saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationComplementary to 2SA2040APPLICATIONSDC/DC converter,relay drivers,lamp drivers,motordriversABSOLUTE MAXIMUM RATINGS(T

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC5772DESCRIPTIONHigh Gain Bandwidth Productf = 9 GHz TYP.THigh power gain and low noise figure ;PG = 13 dB TYP., NF = 1.1 dB typ. @ f = 900 MHz100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in UHF ~ VHF wide band amplifier.