2SC57 Datasheet. Equivalente

 0.1. Size:178K  toshiba
 2sc5784.pdf

2SC5784 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5784 Industrial Applications High-Speed Switching Applications Unit mm DC-DC Converter Applications High DC current gain hFE = 400 to 1000 (I = 0.15 A) C Low collector-emitter saturation voltage V = 0.12 V (max) CE (sat) High-speed switching t = 45 ns (typ.) f Maximum Ratings (Ta = = 25 C) = =

 0.2. Size:321K  toshiba
 2sc5748.pdf

2SC5748 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5748 Horizontal Deflection Output for HDTV&Digital TV. Unit mm High voltage VCBO = 2000 V Low saturation voltage V = 3 V (max) CE (sat) High speed t = 0.15 s (typ.) f Maximum Ratings (Tc = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 2000 V Collector-emi

 0.3. Size:166K  toshiba
 2sc5703.pdf

2SC5703 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703 Industrial Applications High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 400 to 1000 (I = 0.5 A) C Low collector-emitter saturation voltage V = 0.12 V (max) CE (sat) High-speed switching t = 55 ns (typ.) f Maximum Ratings (T

 0.4. Size:160K  toshiba
 2sc5738.pdf

2SC5738 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5738 Industrial Applications High-Speed Switching Applications Unit mm DC-DC Converter Applications High DC current gain hFE = 400 to 1000 (I = 0.5 A) C Low collector-emitter saturation voltage V = 0.15 V (max) CE (sat) High-speed switching t = 90 ns (typ.) f Maximum Ratings (Ta = = 25 C) = =

 0.5. Size:158K  toshiba
 2sc5765.pdf

2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS Unit mm STOROBO FLASH APPLICATIONS Low Saturation Voltage VCE (sat) (1) = 0.27 V (max.) (I = 3 A/I = 60 mA) C B Maximum Ratings (Ta = = 25 C) = = Characteristic Symbol Rating Unit Collector-Base voltage VCBO 15 V Collector-Emitter voltage VCEO 10 V Emitter-Ba

 0.6. Size:304K  toshiba
 2sc5716.pdf

2SC5716 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5716 Horizontal Deflection Output for High Resolution Display, Unit mm Color TV High voltage V = 1700 V CBO High speed t (2) = 0.2 s (typ.) f Collector metal (fin) is fully covered with mold resin. Maximum Ratings (Tc = = 25 C) = = Characteristics Symbol Rating Unit Collector-base vo

 0.7. Size:156K  toshiba
 2sc5720.pdf

2SC5720 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5720 MEDIUM POWER AMPLIFIER APPLICATIONS Unit mm STOROBO FLASH APPLICATIONS Low Saturation Voltage VCE (sat) (1) = 0.25 V (max) (I = 3 A/I = 60 mA) C B Maximum Ratings (Ta = = 25 C) = = Characteristic Symbol Rating Unit Collector-Base voltage VCBO 15 V Collector-Emitter voltage VCEO 10 V Emitter-Bas

 0.8. Size:166K  toshiba
 2sc5714.pdf

2SC5714 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5714 Industrial Applications High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 400 to 1000 (I = 0.5 A) C Low collector-emitter saturation voltage V = 0.15 V (max) CE (sat) High-speed switching t = 90 ns (typ.) f Maximum Ratings (T

 0.9. Size:159K  toshiba
 2sc5713.pdf

2SC5713 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5713 Industrial Applications High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 400 to 1000 (I = 0.5 A) C Low collector-emitter saturation voltage V = 0.15 V (max) CE (sat) High-speed switching t = 50 ns (typ.) f Maximum Ratings (T

 0.10. Size:146K  toshiba
 2sc5712.pdf

2SC5712 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5712 High-Speed Switching Applications Unit mm DC-DC Converter Applications DC-AC Converter Applications High DC current gain hFE = 400 to 1000 (IC = 0.3 A) Low collector-emitter saturation voltage VCE (sat) = 0.14 V (max) High-speed switching tf = 120 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) C

 0.11. Size:168K  toshiba
 2sc5755.pdf

2SC5755 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5755 High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 400 to 1000 (I = 0.2 A) C Low collector-emitter saturation voltage V = 0.12 V (max) CE (sat) High-speed switching t = 25 ns (typ.) f Maximum Ratings (Ta = = 25 C) = = Char

 0.12. Size:411K  toshiba
 2sc5717.pdf

2SC5717 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5717 Horizontal Deflection Output for Super High Resolution Unit mm Display, Color TV, Digital TV. High Speed Switching Applications. High voltage VCBO = 1500 V Low saturation voltage V = 3 V (max) CE (sat) High speed t (2) = 0.1 s (typ.) f Maximum Ratings (Tc = = 25 C) = = Charact

 0.13. Size:182K  toshiba
 2sc5785.pdf

2SC5785 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5785 Industrial Applications High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 400 to 1000 (I = 0.2 A) C Low collector-emitter saturation voltage V = 0.12 V (max) CE (sat) High-speed switching t = 25 ns (typ.) f Maximum Ratings (T

 0.14. Size:30K  sanyo
 2sc5778.pdf

Ordering number ENN6992 2SC5778 NPN Triple Diffused Planar Silicon Transistor 2SC5778 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1600V). 2174A High reliability(Adoption of HVP process). Adoption of MBIT process. [2SC5778] On-chip damper diode. 5.6

 0.15. Size:58K  sanyo
 2sa2040 2sc5707.pdf

Ordering number ENN6913A 2SA2040 / 2SC5707 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2040 / 2SC5707 High Current Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash. Features Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switchin

 0.16. Size:37K  sanyo
 2sa2044 2sc5710.pdf

Ordering number ENN6915 2SA2044 / 2SC5710 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2044 / 2SC5710 DC / DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2045B [2SA2044 / 2SC5710] Features 6.5 Adoption of FBET and MBIT processes. 2.3 5.0 0.5 4 Large current capacitance. Low collecto

 0.17. Size:37K  sanyo
 2sa2043 2sc5709.pdf

Ordering number ENN6914 2SA2043 / 2SC5709 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2043 / 2SC5709 DC / DC Converter Applications Applications Package Dimensions Relay drivers, lamp drivers, motor drivers, strobes. unit mm 2045B [2SA2043 / 2SC5709] Features 6.5 Adoption of FBET and MBIT processes. 2.3 5.0 0.5 4 Large current capacitance. Low collector

 0.18. Size:29K  sanyo
 2sc5777.pdf

Ordering number ENN6991 2SC5777 NPN Triple Diffused Planar Silicon Transistor 2SC5777 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1600V). 2174A High reliability (Adoption of HVP process). [2SC5777] Adoption of MBIT process. 5.6 3.4 On-chip damper d

 0.19. Size:51K  sanyo
 2sc5793.pdf

No. N7451 2SC5793 N7451 No. 31504 NPN CRT 2SC5793 VCBO=1600V HVP MBIT Absolute Maxi

 0.20. Size:31K  sanyo
 2sc5764.pdf

Ordering number ENN6971A 2SC5764 NPN Triple Diffused Planar Silicon Transistor 2SC5764 Switching Regulator Applications Features Package Dimensions High breakdown voltage. unit mm High reliability. 2041A High-speed switching. [2SC5764] Wide ASO. 4.5 10.0 2.8 Adoption of MBIT process. 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Base 2.55 2.55 2 Collector

 0.21. Size:29K  sanyo
 2sa2063 2sc5775.pdf

Ordering number ENN6988 2SA2063 / 2SC5775 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA2063 / 2SC5775 160V / 12A, AF90W Output Applications Features Package Dimensions Large current capacitance. unit mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process. [2SA2063 / 2SC5775] 15.6 3.2 4.8 14.0 2

 0.22. Size:29K  sanyo
 2sa2062 2sc5774.pdf

Ordering number ENN6987 2SA2062 / 2SC5774 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA2062 / 2SC5774 140V / 10A, AF 70W Output Applications Features Package Dimensions Large current capacitance. unit mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process. [2SA2062 / 2SC5774] 15.6 3.2 4.8 14.0

 0.23. Size:29K  sanyo
 2sc5792.pdf

Ordering number ENN6994 2SC5792 NPN Triple Diffused Planar Silicon Transistor 2SC5792 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1600V). 2174A High reliability(Adoption of HVP process). [2SC5792] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.

 0.24. Size:30K  sanyo
 2sc5763.pdf

Ordering number ENN6989A 2SC5763 NPN Triple Diffused Planar Silicon Transistor 2SC5763 Switching Regulator Applications Features Package Dimensions High breakdown voltage. unit mm High reliability. 2010C High-speed switching. [2SC5763] Wide ASO. 10.2 4.5 Adoption of MBIT process. 3.6 5.1 1.3 1.2 0.8 0.4 1 Base 2 Collector 1 2 3 3 Emitter SANY

 0.25. Size:29K  sanyo
 2sc5776.pdf

Ordering number ENN6990 2SC5776 NPN Triple Diffused Planar Silicon Transistor 2SC5776 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1600V). 2174A High reliability (Adoption of HVP process). [2SC5776] Adoption of MBIT process. 5.6 3.4 16.0 On-chip da

 0.26. Size:31K  sanyo
 2sc5791.pdf

Ordering number ENN6993 2SC5791 NPN Triple Diffused Planar Silicon Transistor 2SC5791 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1600V). 2174A High reliability(Adoption of HVP process). [2SC5791] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.

 0.27. Size:61K  sanyo
 2sa2039 2sc5706.pdf

Ordering number ENN6912B 2SA2039 / 2SC5706 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2039 / 2SC5706 High Current Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash. Features Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switchin

 0.28. Size:40K  sanyo
 2sa2039 2sc5706.pdf

Ordering number ENN6912 2SA2039 / 2SC5706 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2039 / 2SC5706 High Current Switching Applications Features Package Dimensions DC-DC converter, relay drivers, lamp drivers, unit mm motor drivers, strobes. 2045B Features [2SA2039 / 2SC5706] Adoption of FBET, MBIT process. 6.5 2.3 5.0 Large current capacitance. 0.5 4

 0.29. Size:123K  renesas
 2sc5758.pdf

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 0.30. Size:78K  nec
 2sc5751.pdf

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5751 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES Ideal for medium output power amplification PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm HFT3 technology (fT = 12 GHz) adopted High reliability through use of gold electrodes Fla

 0.31. Size:85K  nec
 2sc5754.pdf

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5754 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES Ideal for 460 MHz to 2.4 GHz medium output power amplification PO (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm High collector efficiency C = 60% UHS0-HV technology (fT = 25 GHz

 0.32. Size:94K  nec
 2sc5746.pdf

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5746 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES Low voltage operation, low phase distortion Ideal for OSC applications 3-pin lead-less minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5746 50 pcs (Non reel) 8 mm wide embossed taping 2SC5746-T3 10 kpcs/re

 0.33. Size:85K  nec
 2sc5753.pdf

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5753 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES Ideal for medium output power amplification PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm HFT3 technology (fT = 12 GHz) adopted High reliability through use of gold electrodes Fla

 0.34. Size:118K  nec
 2sc5745.pdf

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5745 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Low voltage operation, low phase distortion Ideal for OSC applications Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5745 50 pcs (Non reel) 8 mm

 0.35. Size:88K  nec
 2sc5752.pdf

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5752 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) 4-PIN SUPER MINIMOLD FEATURES Ideal for medium output power amplification PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm HFT3 technology (fT = 12 GHz) adopted High reliability through use of gold electrodes 4-pin super minimold pa

 0.36. Size:94K  nec
 2sc5787.pdf

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5787 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES Ideal for 3 GHz or higher OSC applications Low noise, high gain fT = 20 GHz TYP., S21e 2 = 13 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz NF = 1.4 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt UHS0 technology (fT = 25 GHz) adopte

 0.37. Size:75K  nec
 2sc5761.pdf

DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5761 NPN SiGe RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES Ideal for low noise high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum stable power gain MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz SiGe technology (fT

 0.38. Size:101K  nec
 2sc5704.pdf

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5704 NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD FEATURES Ideal for low noise high-gain amplification and oscillation at 3 GHz or over NF = 1.1 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz High fT fT = 25.0 GHz TYP. @ VCE = 3 V, IC = 30 mA, f = 2 GHz 6-pin lead-less mini

 0.39. Size:95K  nec
 2sc5786.pdf

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5786 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Ideal for 3 GHz or higher OSC applications Low noise, high gain fT = 20 GHz TYP., S21e 2 = 12 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz NF = 1.4 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt UHS0 technolog

 0.40. Size:97K  nec
 2sc5737.pdf

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5737 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Low voltage operation, low phase distortion Ideal for VCO applications Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5737 50 pcs (Non reel) 8 mm

 0.41. Size:125K  nec
 2sc5736.pdf

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5736 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Low voltage operation, low phase distortion Ideal for OSC applications Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5736 50 pcs (Non reel) 8 mm

 0.42. Size:78K  nec
 2sc5750.pdf

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5750 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mW) 4-PIN SUPER MINIMOLD FEATURES Ideal for medium output power amplification PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm HFT3 technology (fT = 12 GHz) adopted High reliability through use of gold electrodes 4-pin super minimold pa

 0.43. Size:62K  rohm
 2sc5730k.pdf

2SC5730K Transistors Medium power transistor (30V, 1A) 2SC5730K External dimensions (Unit mm) Features 1) High speed switching. SMT3 (Tf Typ. 50ns at IC = 1.0A) (SC-59) 2) Low saturation voltage, typically (Typ. 150mV at IC = 500mA, IB = 50mA) 1.6 3) Strong discharge power for inductive load and 2.8 capacitance load. (1) Emitter 4) Complements th

 0.44. Size:50K  rohm
 2sc5730.pdf

2SC5730 Transistor Medium power transistor (30V, 1.0A) 2SC5730 External dimensions (Units mm) Features 1) High speed switching. (Tf Typ. 35ns at IC = 1.0A) 2.8 TSMT3 1.6 2) Low saturation voltage, typically (Typ. 150mV at IC = 500mA, IB = 50mA) 3) Strong discharge power for inductive load and capacitance load. (1) Base (2) Emitter 4) Complements the 2SA2048

 0.45. Size:332K  onsemi
 2sa2040-e 2sa2040 2sc5707-e 2sc5707.pdf

Ordering number EN6913B 2SA2040/2SC5707 Bipolar Transistor http //onsemi.com (-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al

 0.46. Size:430K  onsemi
 2sa2040 2sc5707.pdf

Ordering number EN6913B 2SA2040/2SC5707 Bipolar Transistor http //onsemi.com (-)50V, (-)8A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al

 0.47. Size:326K  onsemi
 2sa2039-e 2sc5706-h 2sc5706 2sc5706.pdf

Ordering number EN6912D 2SA2039/2SC5706 Bipolar Transistor http //onsemi.com (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al

 0.48. Size:418K  onsemi
 2sa2039 2sc5706.pdf

Ordering number EN6912D 2SA2039/2SC5706 Bipolar Transistor http //onsemi.com (-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash Features Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al

 0.49. Size:73K  panasonic
 2sc5788.pdf

Power Transistors 2SC5788 Silicon NPN epitaxial planar type Unit mm Power supply for Audio & Visual equipments 10.0 0.2 5.0 0.1 1.0 0.2 such as TVs and VCRs Industrial equipments such as DC-DC converters Features 1.2 0.1 C 1.0 High-speed switching (tstg storage time/tf fall time is short) 1.48 0.2 2.25 0.2 Low collector to emitter saturation voltage VCE(sat)

 0.50. Size:57K  panasonic
 2sc5725.pdf

Transistors 2SC5725 Silicon NPN epitaxial planar type For DC-DC converter Unit mm 0.40+0.10 0.05 0.16+0.10 0.06 Features 3 Low collector-emitter saturation voltage VCE(sat) Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 1 2 (0.95) (0.95) 1.9 0.1 2.90+0.20 0.05 Absolute Maximum Ratings Ta = 25

 0.51. Size:79K  panasonic
 2sc5739.pdf

Power Transistors 2SC5739 Silicon NPN epitaxial planar type Unit mm 4.6 0.2 Power supply for Audio & Visual equipments 9.9 0.3 2.9 0.2 such as TVs and VCRs 3.2 0.1 Industrial equipments such as DC-DC converters Features High-speed switching (tstg storage time/tf fall time is short) 1.4 0.2 Low collector-emitter saturation voltage VCE(sat) 2.6 0.1 1.6 0.2

 0.52. Size:78K  panasonic
 2sc5779.pdf

Power Transistors 2SC5779 Silicon NPN epitaxial planar type Unit mm 4.6 0.2 Power supply for Audio & Visual equipments 9.9 0.3 2.9 0.2 such as TVs and VCRs 3.2 0.1 Industrial equipments such as DC-DC converters Features High-speed switching (tstg storage time/tf fall time is short) 1.4 0.2 Low collector-emitter saturation voltage VCE(sat) 2.6 0.1 1.6 0.2

 0.53. Size:182K  utc
 2sc5765.pdf

UNISONIC TECHNOLOGIES CO., LTD 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER AMPLIFIER STROBO FLASH DESCRIPTION medium power amplifier applications strobo flash applications FEATURES * Low Saturation Voltage VCE(sat) = 0.27 V (max.), (Ic = 3A / IB =60 mA) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3

 0.54. Size:102K  hitachi
 2sc5700.pdf

2SC5700 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1435 (Z) Rev.0 Jul. 2001 Features High power gain low noise figure at low power operation S21 2 = 16 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note Marking is WB . 2SC5700 Absolute Maximum Ratings (Ta = 25 C) Parameter Sym

 0.55. Size:109K  hitachi
 2sc5702.pdf

2SC5702 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator ADE-208-1414 (Z) 1st. Edition Mar. 2001 Features High gain bandwidth product fT = 8 GHz typ. High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note Marking is ZS- . 2SC5702 Absolute Maximum Ratings (Ta

 0.56. Size:91K  hitachi
 2sc5773.pdf

2SC5773 Silicon NPN Epitaxial UHF / VHF wide band amplifier ADE-208-1391(Z) Preliminary 1st. Edition Mar. 2001 Features High gain bandwidth product fT = 10.8 GHz typ. High power gain and low noise figure ; PG = 11.9 dB typ., NF = 1.1 dB typ. at f = 900 MHz Outline MPAK 3 1 1. Emitter 2 2. Base 3. Collector Note Marking is JR- . This data sheet contains tentativ

 0.57. Size:109K  hitachi
 2sc5757.pdf

2SC5757 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1396D (Z) Rev.4 Jul. 2001 Features Super compact package MFPAK (1.4 x 0.8 x 0.59 mm) Outline MFPAK 3 1 2 1. Emitter 2. Base 3. Collector Note Marking is WE . 2SC5757 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 10 V Collector to emitter voltage

 0.58. Size:92K  hitachi
 2sc5759.pdf

2SC5759 Silicon NPN Epitaxial UHF / VHF wide band amplifier ADE-208-1389 (Z) Preliminary 1st. Edition Mar. 2001 Features High gain bandwidth product fT = 10.6 GHz typ. High power gain and low noise figure ; PG = 11.5B typ. , NF = 1.1 dB typ. at f = 900 MHz Very low distortion Output IP3 (800 MHz) = 36 dBm typ. Outline CMPAK-4 2 3 1 4 1. Collector 2. Collector 3.

 0.59. Size:90K  hitachi
 2sc5772.pdf

2SC5772 Silicon NPN Epitaxial UHF / VHF wide band amplifier ADE-208-1390 (Z) Preliminary 1st. Edition Mar. 2001 Features High gain bandwidth product fT = 9 GHz typ. High power gain and low noise figure ; PG = 13 dB typ., NF = 1.1 dB typ. at f = 900 MHz Outline MPAK 3 1 1. Emitter 2 2. Base 3. Collector Note Marking is FR- . This data sheet contains tentative sp

 0.60. Size:1226K  jiangsu
 2sc5785.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SC5785 TRANSISTOR NPN SOT-89-3L 1 2 3 FEATURES 1. BASE High-Speed Switching Applications 1 DC-DC Converter Applications 2. COLLETOR 2 Strobe Applications 3 3. EMITTER Marking 3E MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VC

 0.61. Size:190K  wietron
 2sc5706.pdf

2SC5706 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1.BASE 3 2.COLLECTOR 2 3.EMITTER 1 Features * Large current capacitance D-PAK(TO-252) * Low collector-to-emitter saturation voltage * High-speed switching * High allowable dissipation Mechanical Data * Case Molded Plastic * Weight 0.925 grams ABSOLUTE MAXIMUM RATINGS(Ta=25 C) Rating Symbol Value Unit VCBO 80 V

 0.62. Size:1319K  kexin
 2sc5706.pdf

SMD Type Transistors NPN Transistors 2SC5706 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features 4 Collector Current Capability IC=5A Collector Emitter Voltage VCEO=80V 0.127 High-speed switching. +0.1 0.80-0.1 max Low collector-to-emitter saturation voltage High allowable power dissipation. + 0.1 1 Base 2.3 0

 0.63. Size:1337K  kexin
 2sc5773.pdf

SMD Type Transistors NPN Transistors 2SC5773 SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=80mA 1 2 Collector Emitter Voltage VCEO=6V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collect

 0.64. Size:1442K  kexin
 2sc5785.pdf

SMD Type Transistors NPN Transistors 2SC5785 1.70 0.1 Features High DC current gain hFE = 400 to 1000 Low collector-emitter saturation voltage High-speed switching 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 10 V Emitte

 0.65. Size:1339K  kexin
 2sc5772.pdf

SMD Type Transistors NPN Transistors 2SC5772 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=75mA 1 2 Collector Emitter Voltage VCEO=9V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collecto

 0.66. Size:253K  inchange semiconductor
 2sc5706.pdf

isc Silicon NPN Power Transistor 2SC5706 DESCRIPTION Large current capacitance High-speed switching 100% avalanche tested High allowable power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation Complementary to 2SA2039 APPLICATIONS DC/DC converter,relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 0.67. Size:177K  inchange semiconductor
 2sc5764.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SC5764 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulators applications. ABSOLUTE MAXIMUM RA

 0.68. Size:179K  inchange semiconductor
 2sc5763.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SC5763 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulators applications. ABSOLUTE MAXIMUM RA

 0.69. Size:252K  inchange semiconductor
 2sc5707.pdf

isc Silicon NPN Power Transistor 2SC5707 DESCRIPTION Large current capacitance High-speed switching 100% avalanche tested Low collector-to-emitter saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation Complementary to 2SA2040 APPLICATIONS DC/DC converter,relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(T

 0.70. Size:170K  inchange semiconductor
 2sc5772.pdf

INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC5772 DESCRIPTION High Gain Bandwidth Product f = 9 GHz TYP. T High power gain and low noise figure ; PG = 13 dB TYP., NF = 1.1 dB typ. @ f = 900 MHz 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in UHF VHF wide band amplifier.