2SC576 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC576
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.36 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 375 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO18
2SC576 Transistor Equivalent Substitute - Cross-Reference Search
2SC576 Datasheet (PDF)
2sc5765.pdf
2SC5765 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5765 MEDIUM POWER AMPLIFIER APPLICATIONS Unit: mm STOROBO FLASH APPLICATIONS Low Saturation Voltage: VCE (sat) (1) = 0.27 V (max.) (I = 3 A/I = 60 mA) C BMaximum Ratings (Ta == 25C) ==Characteristic Symbol Rating UnitCollector-Base voltage VCBO 15 VCollector-Emitter voltage VCEO 10 VEmitter-Ba
2sc5764.pdf
Ordering number : ENN6971A2SC5764NPN Triple Diffused Planar Silicon Transistor2SC5764Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage. unit : mm High reliability. 2041A High-speed switching.[2SC5764] Wide ASO.4.510.02.8 Adoption of MBIT process.3.22.41.61.20.70.751 2 31 : Base2.55 2.552 : Collector
2sc5763.pdf
Ordering number : ENN6989A2SC5763NPN Triple Diffused Planar Silicon Transistor2SC5763Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage. unit : mm High reliability. 2010C High-speed switching.[2SC5763] Wide ASO.10.24.5 Adoption of MBIT process. 3.65.11.31.20.80.41 : Base2 : Collector1 2 33 : EmitterSANY
2sc5761.pdf
DATA SHEETNPN SILICON GERMANIUM RF TRANSISTOR2SC5761NPN SiGe RF TRANSISTOR FORLOW NOISE HIGH-GAIN AMPLIFICATIONFLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)FEATURES Ideal for low noise high-gain amplificationNF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz SiGe technology (fT
2sc5765.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER AMPLIFIER STROBO FLASH DESCRIPTION medium power amplifier applications strobo flash applications FEATURES * Low Saturation Voltage: VCE(sat) = 0.27 V (max.), (Ic = 3A / IB =60 mA) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3
2sc5764.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC5764DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOFast Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulators applications.ABSOLUTE MAXIMUM RA
2sc5763.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC5763DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOFast Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulators applications.ABSOLUTE MAXIMUM RA
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
