2SC587M Specs and Replacement

Type Designator: 2SC587M

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 300

Noise Figure, dB: -

Package: TO18

 2SC587M Substitution

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2SC587M datasheet

 8.1. Size:1603K  rohm

2sc5876u3.pdf pdf_icon

2SC587M

2SC5876U3 Datasheet Medium power transistor (60V, 0.5A) lOutline l SOT-323 Parameter Value SC-70 VCEO 60V IC 500mA UMT3 lFeatures lInner circuit l l 1)High speed switching. (Tf Typ. 80ns at IC=500mA) 2)Low saturation voltage, typically (Typ. 150mV at IC=100mA, IB=10mA) 3)Strong discharge power for inductive load and ca... See More ⇒

 8.2. Size:1647K  rohm

2sc5876.pdf pdf_icon

2SC587M

2SC5876 Datasheet Medium power transistor (60V, 0.5A) lOutline l Parameter Value UMT3 VCEO 60V IC 500mA SOT-323 SC-70 lFeatures l 1)High speed switching. lInner circuit l (Tf Typ. 80ns at IC=500mA) 2)Low saturation voltage, typically (Typ. 150mV at IC=100mA, IB=10mA) 3)Strong discharge power for ... See More ⇒

 8.3. Size:98K  rohm

2sc5875.pdf pdf_icon

2SC587M

2SC5875 Transistors Power transistor (30V, 2A) 2SC5875 External dimensions (Unit mm) Features 1) High speed switching. ATV 2.5 6.8 (Tf Typ. 20ns at IC = 2A) 2) Low saturation voltage, typically (Typ. 200mV at IC = 1.0A, IB = 0.1A) 0.65Max. 3) Strong discharge power for inductive load and 0.5 (1) (2) (3) capacitance load. 2.54 2.54 1.05 0.45 (1) Emitter ... See More ⇒

 8.4. Size:98K  rohm

2sc5877s.pdf pdf_icon

2SC587M

2SC5877S Transistors Power transistor (60V, 0.5A) 2SC5877S External dimensions (Unit mm) Features 1) High speed switching. 4.0 2.0 SPT (Tf Typ. 80ns at IC = 500mA) 2) Low saturation voltage, typically 0.45 (Typ. 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and 2.5 0.5 0.45 capacitance load. 5.0 (1) Emitter 4) Complements t... See More ⇒

Detailed specifications: 2SC582A, 2SC583, 2SC583Z, 2SC584, 2SC585, 2SC586, 2SC587, 2SC587A, S9018, 2SC588, 2SC589, 2SC589N, 2SC58A, 2SC59, 2SC590, 2SC590N, 2SC591

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