2SC591
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC591
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20
W
Maximum Collector-Base Voltage |Vcb|: 100
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 4
V
Maximum Collector Current |Ic max|: 1.5
A
Max. Operating Junction Temperature (Tj): 175
°C
Transition Frequency (ft): 80
MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package:
TO8
2SC591
Transistor Equivalent Substitute - Cross-Reference Search
2SC591
Datasheet (PDF)
0.1. Size:48K rohm
2sc5916.pdf
2SC5916 Transistor Medium power transistor (30V, 2A) 2SC5916 External dimensions (Units : mm) Features 1) High speed switching. (Tf : Typ. : 20ns at IC = 2A) 2.8TSMT31.62) Low saturation voltage, typically (Typ. : 200mV at IC = 1.0A, IB = 0.1A) 3) Strong discharge power for inductive load and capacitance load. (1) Base4) Complements the 2SA2113 (2) EmitterEach
0.2. Size:78K panasonic
2sc5913.pdf
Power Transistors2SC5913Silicon NPN triple diffusion mesa typeHorizontal deflection output for TV, CRT MonitorUnit: mm15.50.5 3.00.3 3.20.155 Features High breakdown voltage: VCBO 1 500 V Wide safe operation area Built-in dumper diode 55(4.0)52.00.21.10.1 Absolute Maximum Ratings TC = 25C0.70.1Parameter Symbol
0.3. Size:78K panasonic
2sc5912.pdf
Power Transistors2SC5912Silicon NPN triple diffusion mesa typeHorizontal deflection output for TVUnit: mm15.50.5 3.00.3 3.20.155 Features High breakdown voltage: VCBO 1 500 V Wide safe operation area Built-in dumper diode 55(4.0)52.00.21.10.1 Absolute Maximum Ratings TC = 25C0.70.1Parameter Symbol Rating Unit
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