2N217 Datasheet, Equivalent, Cross Reference Search

   Type Designator: 2N217
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 12 V
   Maximum Collector Current |Ic max|: 0.07 A
   Max. Operating Junction Temperature (Tj): 50 °C
   Transition Frequency (ft): 1 MHz
   Collector Capacitance (Cc): 20 pF
   Forward Current Transfer Ratio (hFE), MIN: 75
   Noise Figure, dB: -
   Package: TO1

2N217 Transistor Equivalent Substitute - Cross-Reference Search