2SC614 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC614
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 7 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO5
2SC614 Transistor Equivalent Substitute - Cross-Reference Search
2SC614 Datasheet (PDF)
1.1. 2sc6140.pdf 
Size:173K _update
2SC6140 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6140 ○ Audio Frequency Amplifier Applications 単位: mm • High collector voltage : VCEO = 160 V • Small collector output capacitance : Cob = 12pF (typ.) • High transition frequency : fT = 100MHz (typ.) • Complementary to 2SA2220 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collec
1.2. 2sc6145.pdf Size:227K _update
2SC6145 Audio Amplification Transistor Features and Benefits Description ▪ LAPT (High frequency multi emitter transistor) Sanken LAPT transistors have an innovative design, produced ▪ Small package (TO-3P) by adapting advancements in the unique Sanken thin-wafer ▪ High power handling capacity, 160 W production technology. These NPN power transistors achieve ▪ Improved sound out
1.3. 2sc6145a.pdf Size:226K _update
2SC6145A Audio Amplification Transistor Features and Benefits Description ▪ LAPT (High frequency multi emitter transistor) Sanken LAPT transistors have an innovative design, produced ▪ Small package (TO-3P) by adapting advancements in the unique Sanken thin-wafer ▪ High power handling capacity, 160 W production technology. These NPN power transistors achieve ▪ Improved sound ou
1.4. 2sc6142 100423.pdf Size:206K _toshiba
2SC6142 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6142 Unit: mm 0 High Voltage Switching Applications 0 Switching Regulator Applications 6.5±0.2 0 DC-DC Converter Applications 5.2±0.2 0.6 MAX. • Excellent switching times: tf = 0.15 ?s (typ.) 1.1±0.2 0.9 • High collector breakdown voltage: VCES = 800 V, VCEO = 375 V 0.6 MAX 2.3 2.3 Absolute Maximum Rat
1.5. 2sc6144.pdf Size:68K _sanyo
Ordering number : ENA1149 2SC6144 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6144 High-Current Switching Applications Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings a
1.6. 2sc6144sg.pdf Size:292K _sanyo
2SC6144SG Ordering number : ENA1800 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6144SG High-Current Switching Applications Applications Relay drivers, lamp drivers, motor drivers Features Adoption of MBIT process Large current capacitance (IC=10A) Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) High-speed switching (tf=25ns(t
Datasheet: 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 , 2N3201 , 2N4401 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2N3208 , 2N3209 , 2N3209AQF .
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