2SC614 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

 0.1. Size:206K  toshiba
 2sc6142.pdf

2SC6142 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6142 Unit: mm High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications MAX Excellent switching times: tf = 0.15 s (typ.) High collector breakdown voltage: VCES = 800

 0.2. Size:173K  toshiba
 2sc6140.pdf

2SC6140 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6140 Audio Frequency Amplifier Applications : mm High collector voltage : VCEO = 160 V Small collector output capacitance : Cob = 12pF (typ.) High transition frequency : fT = 100MHz (typ.) Complementary to 2SA2220 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollec

 0.3. Size:68K  sanyo
 2sc6144.pdf

Ordering number : ENA1149 2SC6144SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon Transistor2SC6144High-Current Switching ApplicationsApplications Relay drivers, lamp drivers, motor drivers.Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.SpecificationsAbsolute Maxi

 0.4. Size:292K  sanyo
 2sc6144sg.pdf

2SC6144SGOrdering number : ENA1800SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon Transistor2SC6144SGHigh-Current Switching ApplicationsApplications Relay drivers, lamp drivers, motor driversFeatures Adoption of MBIT process Large current capacitance (IC=10A) Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) High-speed switchi

 0.5. Size:239K  onsemi
 2sc6144sg.pdf

Ordering number : ENA1800B2SC6144SGBipolar Transistorhttp://onsemi.com( )50V, 10A, Low VCE sat NPN TO-220F-3FSApplications Relay drivers, lamp drivers, motor driversFeatures Adoption of MBIT process Large current capacitance (IC=10A) Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) High-speed switching (tf=25ns(typ.))SpecificationsAb

 0.6. Size:226K  sanken-ele
 2sc6145a.pdf

2SC6145AAudio Amplification TransistorFeatures and Benefits Description LAPT (High frequency multi emitter transistor) Sanken LAPT transistors have an innovative design, produced Small package (TO-3P) by adapting advancements in the unique Sanken thin-wafer High power handling capacity, 160 W production technology. These NPN power transistors achieve Improved sound ou

 0.7. Size:227K  sanken-ele
 2sc6145.pdf

2SC6145Audio Amplification TransistorFeatures and Benefits Description LAPT (High frequency multi emitter transistor) Sanken LAPT transistors have an innovative design, produced Small package (TO-3P) by adapting advancements in the unique Sanken thin-wafer High power handling capacity, 160 W production technology. These NPN power transistors achieve Improved sound out

 0.8. Size:210K  inchange semiconductor
 2sc6144.pdf

isc Silicon NPN Power Transistors 2SC6144DESCRIPTIONCollector-Emitter Saturation Voltage-: V = 0.36V(Max.)@I = 6ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR) CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,lamp drivers,motor driversABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

 0.9. Size:192K  inchange semiconductor
 2sc6145.pdf

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC6145DESCRIPTIONHigh frequency multi emitter transistorSmall package(TO-3P)High power handling capacity ,160WComplement to Type 2SA2223Minimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSSignal transistors for audio amplifiersAudio marketABSOLUTE MAXIMUM RATIN