2SC660 Specs and Replacement
Type Designator: 2SC660
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO1
2SC660 Substitution
- BJT ⓘ Cross-Reference Search
2SC660 datasheet
Detailed specifications: 2SC655, 2SC656, 2SC657, 2SC658, 2SC658M, 2SC659, 2SC65Y, 2SC66, 2N5401, 2SC661, 2SC662, 2SC663, 2SC664, 2SC664A, 2SC665, 2SC665A, 2SC665H
Keywords - 2SC660 pdf specs
2SC660 cross reference
2SC660 equivalent finder
2SC660 pdf lookup
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2SC660 replacement
History: BCW66RB
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