2SC680 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC680
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 8 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO66
2SC680 Transistor Equivalent Substitute - Cross-Reference Search
2SC680 Datasheet (PDF)
9.3. Size:186K inchange semiconductor
2sc681.pdf
2sc681.pdf
isc Silicon NPN Power Transistor 2SC681DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 70V (Min)CEO(SUS)Low Collector Saturation Voltage-: V = 2.0V(Max.)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in B/W TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)a
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
