2SC680 Specs and Replacement

Type Designator: 2SC680

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 8 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO66

 2SC680 Substitution

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2SC680 datasheet

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2SC680

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 9.2. Size:107K  mospec

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2SC680

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 9.3. Size:186K  inchange semiconductor

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2SC680

isc Silicon NPN Power Transistor 2SC681 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 70V (Min) CEO(SUS) Low Collector Saturation Voltage- V = 2.0V(Max.)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in B/W TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒

Detailed specifications: 2SC674SP, 2SC675, 2SC676, 2SC677, 2SC678, 2SC679, 2SC679A, 2SC68, S9014, 2SC680A, 2SC681, 2SC681A, 2SC681ARD, 2SC682, 2SC682A, 2SC683, 2SC683A

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