2SC682 Specs and Replacement
Type Designator: 2SC682
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.18 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 275 MHz
Collector Capacitance (Cc): 0.9 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO72
2SC682 Substitution
- BJT ⓘ Cross-Reference Search
2SC682 datasheet
isc Silicon NPN Power Transistor 2SC681 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 70V (Min) CEO(SUS) Low Collector Saturation Voltage- V = 2.0V(Max.)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in B/W TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒
Detailed specifications: 2SC679, 2SC679A, 2SC68, 2SC680, 2SC680A, 2SC681, 2SC681A, 2SC681ARD, MJE340, 2SC682A, 2SC683, 2SC683A, 2SC684, 2SC685, 2SC685A, 2SC685H, 2SC686
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