2SC685H Specs and Replacement

Type Designator: 2SC685H

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 4 W

Maximum Collector-Base Voltage |Vcb|: 300 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 12 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO66

 2SC685H Substitution

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2SC685H datasheet

 9.1. Size:1146K  1

 2sc684.pdf pdf_icon

2SC685H

2SC684 ... See More ⇒

 9.2. Size:107K  mospec

 2sc681.pdf pdf_icon

2SC685H

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 9.3. Size:186K  inchange semiconductor

 2sc681.pdf pdf_icon

2SC685H

isc Silicon NPN Power Transistor 2SC681 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 70V (Min) CEO(SUS) Low Collector Saturation Voltage- V = 2.0V(Max.)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in B/W TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒

Detailed specifications: 2SC681ARD, 2SC682, 2SC682A, 2SC683, 2SC683A, 2SC684, 2SC685, 2SC685A, TIP35C, 2SC686, 2SC686A, 2SC687, 2SC688, 2SC689, 2SC689H, 2SC68M, 2SC69

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