2SC827T Specs and Replacement
Type Designator: 2SC827T
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 370
Package: TO39
2SC827T Substitution
- BJT ⓘ Cross-Reference Search
2SC827T datasheet
Transistor 2SC829 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCE... See More ⇒
Transistor 2SC829 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCE... See More ⇒
Detailed specifications: 2SC821Z, 2SC822, 2SC822Z, 2SC823, 2SC824, 2SC825, 2SC826, 2SC827, NJW0281G, 2SC828, 2SC828A, 2SC829, 2SC829Z, 2SC83, 2SC830, 2SC830H, 2SC831
Keywords - 2SC827T pdf specs
2SC827T cross reference
2SC827T equivalent finder
2SC827T pdf lookup
2SC827T substitution
2SC827T replacement
