All Transistors. 2SC828 Datasheet

 

2SC828 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC828
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 110 MHz
   Forward Current Transfer Ratio (hFE), MIN: 65
   Noise Figure, dB: -
   Package: TO92

 2SC828 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC828 Datasheet (PDF)

 ..1. Size:53K  no
2sc828.pdf

2SC828

 9.1. Size:55K  panasonic
2sc829.pdf

2SC828 2SC828

Transistor2SC829Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesOptimum for RF amplification, oscillation, mixing, and IF stageof FM/AM radios.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 30 V1.27 1.27Collector to emitter voltage VCE

 9.2. Size:59K  panasonic
2sc829 e.pdf

2SC828 2SC828

Transistor2SC829Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesOptimum for RF amplification, oscillation, mixing, and IF stageof FM/AM radios.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 30 V1.27 1.27Collector to emitter voltage VCE

Datasheet: 2SC822 , 2SC822Z , 2SC823 , 2SC824 , 2SC825 , 2SC826 , 2SC827 , 2SC827T , 2SD2012 , 2SC828A , 2SC829 , 2SC829Z , 2SC83 , 2SC830 , 2SC830H , 2SC831 , 2SC833 .

 

 
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