2SC828 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC828
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 110 MHz
Forward Current Transfer Ratio (hFE), MIN: 65
Noise Figure, dB: -
Package: TO92
2SC828 Transistor Equivalent Substitute - Cross-Reference Search
2SC828 Datasheet (PDF)
2sc829.pdf
Transistor2SC829Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesOptimum for RF amplification, oscillation, mixing, and IF stageof FM/AM radios.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 30 V1.27 1.27Collector to emitter voltage VCE
2sc829 e.pdf
Transistor2SC829Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm5.0 0.2 4.0 0.2FeaturesOptimum for RF amplification, oscillation, mixing, and IF stageof FM/AM radios.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.20.45 0.1 0.45 0.1Collector to base voltage VCBO 30 V1.27 1.27Collector to emitter voltage VCE
Datasheet: 2SC822 , 2SC822Z , 2SC823 , 2SC824 , 2SC825 , 2SC826 , 2SC827 , 2SC827T , NJW0281G , 2SC828A , 2SC829 , 2SC829Z , 2SC83 , 2SC830 , 2SC830H , 2SC831 , 2SC833 .