All Transistors. 2SC828 Datasheet

 

2SC828 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC828

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 110 MHz

Forward Current Transfer Ratio (hFE), MIN: 65

Noise Figure, dB: -

Package: TO92

2SC828 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC828 Datasheet (PDF)

1.1. 2sc828.pdf Size:53K _no

2SC828

5.1. 2sc829.pdf Size:55K _panasonic

2SC828
2SC828

Transistor 2SC829 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 5.0 0.2 4.0 0.2 Features Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20 V Em

5.2. 2sc829 e.pdf Size:59K _panasonic

2SC828
2SC828

Transistor 2SC829 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 5.0 0.2 4.0 0.2 Features Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20 V Em

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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