2SC829 Datasheet. Specs and Replacement

Type Designator: 2SC829  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 75 MHz

Collector Capacitance (Cc): 2.6 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO92

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2SC829 datasheet

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2SC829

Transistor 2SC829 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCE... See More ⇒

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2SC829

Transistor 2SC829 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCE... See More ⇒

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2SC829

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Detailed specifications: 2SC823, 2SC824, 2SC825, 2SC826, 2SC827, 2SC827T, 2SC828, 2SC828A, TIP2955, 2SC829Z, 2SC83, 2SC830, 2SC830H, 2SC831, 2SC833, 2SC833N, 2SC836

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