2SC860 Specs and Replacement
Type Designator: 2SC860
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 400 MHz
Collector Capacitance (Cc): 2.2 pF
Forward Current Transfer Ratio (hFE), MIN: 80
Package: TO72
2SC860 Substitution
- BJT ⓘ Cross-Reference Search
2SC860 datasheet
JMnic Product Specification Silicon NPN Power Transistors 2SC867 DESCRIPTION With TO-66 package High collector-base breakdown voltage VCBO=400V(min) APPLICATIONS For high voltage and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER... See More ⇒
isc Silicon NPN Power Transistor 2SC867 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line-operated color TV chroma output circuits and sound output circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vo... See More ⇒
Detailed specifications: 2SC856, 2SC857, 2SC857H, 2SC858, 2SC858FP, 2SC859, 2SC859FP, 2SC86, C5198, 2SC861, 2SC862, 2SC863, 2SC864, 2SC865, 2SC866, 2SC867, 2SC867A
Keywords - 2SC860 pdf specs
2SC860 cross reference
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History: 2SC4406
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