2SC863 Specs and Replacement
Type Designator: 2SC863
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.025 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO72
2SC863 Substitution
- BJT ⓘ Cross-Reference Search
2SC863 datasheet
JMnic Product Specification Silicon NPN Power Transistors 2SC867 DESCRIPTION With TO-66 package High collector-base breakdown voltage VCBO=400V(min) APPLICATIONS For high voltage and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER... See More ⇒
isc Silicon NPN Power Transistor 2SC867 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line-operated color TV chroma output circuits and sound output circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vo... See More ⇒
Detailed specifications: 2SC858, 2SC858FP, 2SC859, 2SC859FP, 2SC86, 2SC860, 2SC861, 2SC862, 2SA1943, 2SC864, 2SC865, 2SC866, 2SC867, 2SC867A, 2SC868, 2SC869, 2SC87
Keywords - 2SC863 pdf specs
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