2SC895 Datasheet and Replacement
Type Designator: 2SC895
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 18 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 90 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 2.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO66
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2SC895 Datasheet (PDF)
2sc898.pdf

isc Silicon NPN Power Transistor 2SC898DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V (Min)(BR)CEOLow Collector Saturation Voltage-: V = 1.5V(Max.)@ I = 6ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX U
2sc897.pdf

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SC897DESCRIPTIONWith TO-3 packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: 2SD1007HR | BDY12B | ED1602D | 2SD2386 | KT208I | DRC9143X | SFE245
Keywords - 2SC895 transistor datasheet
2SC895 cross reference
2SC895 equivalent finder
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History: 2SD1007HR | BDY12B | ED1602D | 2SD2386 | KT208I | DRC9143X | SFE245



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