2SC897 Specs and Replacement

Type Designator: 2SC897

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3

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2SC897 datasheet

 ..1. Size:184K  inchange semiconductor

 2sc897.pdf pdf_icon

2SC897

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SC897 DESCRIPTION With TO-3 packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒

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2SC897

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 9.2. Size:185K  inchange semiconductor

 2sc898.pdf pdf_icon

2SC897

isc Silicon NPN Power Transistor 2SC898 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V (Min) (BR)CEO Low Collector Saturation Voltage- V = 1.5V(Max.)@ I = 6A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX U... See More ⇒

Detailed specifications: 2SC890, 2SC891, 2SC892, 2SC893, 2SC894, 2SC895, 2SC895-1, 2SC896, 8550, 2SC897A, 2SC898, 2SC898A, 2SC899, 2SC89H, 2SC90, 2SC900, 2SC900E

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