2SC900E Datasheet and Replacement
Type Designator: 2SC900E
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 75 MHz
Forward Current Transfer Ratio (hFE), MIN: 250
Noise Figure, dB: -
Package: TO92
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2SC900E Datasheet (PDF)
2sc9018.pdf

Transistors2SC9018This datasheet has been downloaded from:www.DatasheetCatalog.comDatasheets for electronic components.
2sc9013.pdf

Transistors2SC9013Downloaded from Elcodis.com electronic components distributor Downloaded from Elcodis.com electronic components distributor
2sc9014.pdf

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC9014DESCRIPTIONHigh total power dissipationHigh hFE and good linearityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for Switching and amplificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 50 VCBOV Coll
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 3DD4617H | MPS5130 | DTA123EET1G | ESM2060 | MP602 | ME8002 | NB312F
Keywords - 2SC900E transistor datasheet
2SC900E cross reference
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History: 3DD4617H | MPS5130 | DTA123EET1G | ESM2060 | MP602 | ME8002 | NB312F



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