2SC947 Transistor. Datasheet pdf. Equivalent

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2SC947 Datasheet (PDF)

1.1. 2sc947.pdf Size:43K _no

5.1. 2sc941.pdf Size:229K _toshiba

5.2. 2sc941tm.pdf Size:249K _toshiba

2SC941TM TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC941TM High Frequency Amplifier Applications Unit: mm AM High Frequency Amplifier Applications AM Frequency Converter Applications � Low noise figure: NF = 3.5dB (max) (f = 1 MHz) Maximum Ratings (Ta = = 25�C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter volta

5.3. 2sc945.pdf Size:73K _nec

5.4. 2sc945.pdf Size:180K _utc

UNISONIC TECHNOLOGIES CO., LTD 2SC945 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR DESCRIPTION The UTC 2SC945 is an audio frequency amplifier high frequency OSC NPN transistor. FEATURES * Collector-Emitter voltage: BVCBO=50V * Collector current up to 150mA * High hFE linearity Lead-free: 2SC945L * Complimentary to UTC 2SA733

5.5. 2sc940.pdf Size:42K _no

5.6. 2sc945.pdf Size:226K _no

ST 2SC945 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups, R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor ST 2SA733 is recommended. On special request, these transistors can be 1. Emitter 2. Collector 3. Base manufactured in different pin configurati

5.7. 2sc943.pdf Size:46K _no

5.8. 2sc940.pdf Size:151K _jmnic

JMnic Product Specification Silicon NPN Power Transistors 2SC940 DESCRIPTION ·With TO-3 package ·High current capability ·Wide area of safe operation APPLICATIONS ·For B/W TV horizontal deflection application PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CON

5.9. 2sc940.pdf Size:122K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC940 DESCRIPTION Ў¤ With TO-3 package Ў¤ High current capability Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For B/W TV horizontal deflection application PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж

5.10. 2sc945m.pdf Size:1517K _blue-rocket-elect

2SC945M(BR3DG945M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 耐压高,放大特性好。 High voltage, excellent hFE linearity. 用途 / Applications 用于一般放大及低速开关。 General power amplifier application and low speed switching. 内�

5.11. 2sc945.pdf Size:781K _kexin

SMD Type SMD Type si o ors SMD Type TranDistdes NPN Transistors 2SC945 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector current up to 150mA ● High hFE linearity 1 2 ● Complementary to 2SA733 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector

5.12. 2sc945.pdf Size:272K _shenzhen-tuofeng-semi

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC945 TRANSISTOR (NPN) FEATURE 1. BASE Excellent hFE Linearity 2. EMITTER Low noise 3. COLLECTOR Complementary to A733 MARKING:CR· MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emi

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BJT: 2SB1308-R | 2SB1308-Q | 2SB1308-P | 2SB1302T-TD-E | 2SB1302S-TD-E | 2SB1260-R | 2SB1260-Q | 2SB1260-P | 2SB1216T-TL-H | 2SB1216T-TL-E | 2SB1216T-H | 2SB1216T-E | 2SB1216S-TL-H | 2SB1216S-TL-E | 2SB1216S-H | 2SB1216S-E | 2SB1205T-TL-E | 2SB1205S-TL-E | 2SB1204T-TL-E | 2SB1204T-E |