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2SD1014 PDF Specs and Replacement


   Type Designator: 2SD1014
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.9 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 50 V
   Maximum Collector Current |Ic max|: 2 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: TO92
 

 2SD1014 Substitution

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2SD1014 PDF detailed specifications

 8.1. Size:57K  sanyo
2sd1012.pdf pdf_icon

2SD1014

Ordering number ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit mm 2033A [2SB808/2SD1012] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1.3 1.3 1 Emitter 2 Collector ( ) 2SB808 3 Base 3.0 3.8 SANYO SPA Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions R... See More ⇒

 8.2. Size:42K  panasonic
2sd1011 e.pdf pdf_icon

2SD1014

Transistor 2SD1011 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 1... See More ⇒

 8.3. Size:42K  panasonic
2sd1011.pdf pdf_icon

2SD1014

Transistor 2SD1011 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 1... See More ⇒

 8.4. Size:42K  panasonic
2sd1010 e.pdf pdf_icon

2SD1014

Transistor 2SD1010 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25 C) +0.2 +0.2 0.45 0.1 0.45 0.1 Parameter Symbol Ratings Unit 1.27 1.2... See More ⇒

Detailed specifications: 2SD100A , 2SD101 , 2SD1010 , 2SD1011 , 2SD1012 , 2SD1012F , 2SD1012G , 2SD1012H , SS8050 , 2SD1015 , 2SD1016 , 2SD1017 , 2SD1018 , 2SD102 , 2SD1020 , 2SD1020G , 2SD1020O .

History: 2SC2415 | MA881

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