2SD1014 Todos los transistores

 

2SD1014 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1014

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.9 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 50 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 150

Empaquetado / Estuche: TO92

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2SD1014 Datasheet (PDF)

4.1. 2sd1012.pdf Size:57K _sanyo

2SD1014
2SD1014

Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1.3 1.3 1 : Emitter 2 : Collector ( ) : 2SB808 3 : Base 3.0 3.8 SANYO : SPA Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions R

4.2. 2sd1011 e.pdf Size:42K _panasonic

2SD1014
2SD1014

Transistor 2SD1011 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0± 0.2 4.0± 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 –0.1 0.45 –0.1 Collector to base voltage VCBO 1

 4.3. 2sd1010.pdf Size:38K _panasonic

2SD1014
2SD1014

Transistor 2SD1010 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0± 0.2 4.0± 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25˚C) +0.2 +0.2 0.45 –0.1 0.45 –0.1 Parameter Symbol Ratings Unit 1.27 1.2

4.4. 2sd1010 e.pdf Size:42K _panasonic

2SD1014
2SD1014

Transistor 2SD1010 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0± 0.2 4.0± 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25˚C) +0.2 +0.2 0.45 –0.1 0.45 –0.1 Parameter Symbol Ratings Unit 1.27 1.2

 4.5. 2sd1011.pdf Size:42K _panasonic

2SD1014
2SD1014

Transistor 2SD1011 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 5.0± 0.2 4.0± 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 –0.1 0.45 –0.1 Collector to base voltage VCBO 1

4.6. 2sd1015.pdf Size:39K _sony

2SD1014



4.7. 2sd1016.pdf Size:182K _inchange_semiconductor

2SD1014
2SD1014

isc Product Specification isc Silicon NPN Power Transistor 2SD1016 DESCRIPTION ·High Collector-Base Voltage- : V = 1500V(Min) CBO ·High Current Capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMB

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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