2SD1026 Datasheet. Specs and Replacement
Type Designator: 2SD1026 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 3000
Noise Figure, dB: -
Package: TO220
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2SD1026 datasheet
..1. Size:31K jmnic
2sd1026.pdf 
Product Specification www.jmnic.com 2SD1026 Silicon NPN Transistors Features B C E With TO-247 package Darlington transistor Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 100 V VCEO Collector to emitter voltage 100 V VEBO Emitter to base voltage 7 V IB Base current 1 A IC Collector current 15 A PC Collector power di... See More ⇒
..2. Size:100K inchange semiconductor
2sd1026.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1026 DESCRIPTION High DC Current Gain hFE= 1500(Min.)@ IC= 10A, VCE= 3V High Collector-Emitter Sustaining Voltage- VCEO(SUS) = 100V(Min) APPLICATIONS Designed for general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VC... See More ⇒
8.2. Size:81K jmnic
2sd1023.pdf
Product Specification www.jmnic.com Silicon Power Transistors 2SD1023 DESCRIPTION DARLINGTON High DC current gain With TO-220 package PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage O... See More ⇒
8.3. Size:80K jmnic
2sd1025.pdf
Product Specification www.jmnic.com Silicon Power Transistors 2SD1025 DESCRIPTION DARLINGTON With TO-220 package PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO ... See More ⇒
8.4. Size:301K shindengen
2sd1024.pdf
SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1024 Case TO-220 (T8L10) 8A NPN RATINGS Unit mm ... See More ⇒
8.5. Size:211K inchange semiconductor
2sd1023.pdf
isc Silicon NPN Darlington Power Transistor 2SD1023 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 200V(Min) CEO(SUS) High DC Current Gain h = 1500(Min) @I = 3A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpoe amplifier applications. ABSOLUTE MAXIMUM RATINGS(T... See More ⇒
8.6. Size:212K inchange semiconductor
2sd1025.pdf
isc Silicon NPN Darlington Power Transistor 2SD1025 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 200V(Min) CEO(SUS) High DC Current Gain h = 1500(Min) @I = 5A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpoe amplifier applications. ABSOLUTE MAXIMUM RATINGS(T... See More ⇒
8.7. Size:212K inchange semiconductor
2sd1022.pdf
isc Silicon NPN Darlington Power Transistor 2SD1022 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) High DC Current Gain h = 1500(Min) @I = 3A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpoe amplifier applications. ABSOLUTE MAXIMUM RATINGS(T... See More ⇒
8.8. Size:211K inchange semiconductor
2sd1024.pdf
isc Silicon NPN Darlington Power Transistor 2SD1024 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) High DC Current Gain h = 1500(Min) @I = 5A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpoe amplifier applications. ABSOLUTE MAXIMUM RATINGS(T... See More ⇒
8.9. Size:134K inchange semiconductor
2sd1027.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1027 DESCRIPTION High DC Current Gain hFE= 1500(Min.)@ IC= 10A, VCE= 3V High Collector-Emitter Sustaining Voltage- VCEO(SUS) = 200V(Min) APPLICATIONS Designed for general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VC... See More ⇒
Detailed specifications: 2SD1021, 2SD1021G, 2SD1021O, 2SD1021Y, 2SD1022, 2SD1023, 2SD1024, 2SD1025, 2SD669A, 2SD1027, 2SD1029, 2SD103, 2SD1030, 2SD1031, 2SD1032, 2SD1032A, 2SD1032B
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