All Transistors. 2SD1026 Datasheet

 

2SD1026 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1026

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Collector Current |Ic max|: 15 A

Max. Operating Junction Temperature (Tj): 175 °C

Forward Current Transfer Ratio (hFE), MIN: 3000

Noise Figure, dB: -

Package: TO220

2SD1026 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1026 Datasheet (PDF)

1.1. 2sd1026.pdf Size:31K _jmnic

2SD1026

Product Specification www.jmnic.com 2SD1026 Silicon NPN Transistors Features B C E ?With TO-247 package ?Darlington transistor Absolute Maximum Ratings Tc=25? SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 100 V VCEO Collector to emitter voltage 100 V VEBO Emitter to base voltage 7 V IB Base current 1 A IC Collector current 15 A PC Collector power dissipation

1.2. 2sd1026.pdf Size:100K _inchange_semiconductor

2SD1026
2SD1026

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1026 DESCRIPTION ·High DC Current Gain : hFE= 1500(Min.)@ IC= 10A, VCE= 3V ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) APPLICATIONS ·Designed for general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Co

 4.1. 2sd1020.pdf Size:132K _nec

2SD1026
2SD1026

4.2. 2sd1023.pdf Size:81K _jmnic

2SD1026
2SD1026

Product Specification www.jmnic.com Silicon Power Transistors 2SD1023 DESCRIPTION ·DARLINGTON ·High DC current gain ·With TO-220 package PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open e

 4.3. 2sd1025.pdf Size:80K _jmnic

2SD1026
2SD1026

Product Specification www.jmnic.com Silicon Power Transistors 2SD1025 DESCRIPTION ·DARLINGTON ·With TO-220 package PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO Colle

4.4. 2sd1024.pdf Size:301K _shindengen

2SD1026
2SD1026

SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1024 Case : TO-220 (T8L10) 8A NPN RATINGS Unit : mm

 4.5. 2sd1023.pdf Size:119K _inchange_semiconductor

2SD1026
2SD1026

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1023 DESCRIPTION Ў¤ With TO-220 package Ў¤ High DC current gain Ў¤ DARLINGTON PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage CONDITIONS Open emitt

4.6. 2sd1024.pdf Size:119K _inchange_semiconductor

2SD1026
2SD1026

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1024 DESCRIPTION Ў¤ With TO-220 package Ў¤ High DC current gain Ў¤ DARLINGTON PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg TOR NDU ICO E SEM ANG INCH Collector-base volta

4.7. 2sd1022.pdf Size:267K _inchange_semiconductor

2SD1026
2SD1026

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1022 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High DC Current Gain : hFE= 1500(Min) @IC= 3A ·Low Saturation Voltage APPLICATIONS ·Designed for general purpoe amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT

4.8. 2sd1025.pdf Size:119K _inchange_semiconductor

2SD1026
2SD1026

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1025 DESCRIPTION Ў¤ With TO-220 package Ў¤ High DC current gain Ў¤ DARLINGTON PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg TOR NDU ICO E SEM ANG INCH PARAMETER CONDITIONS

4.9. 2sd1027.pdf Size:134K _inchange_semiconductor

2SD1026
2SD1026

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1027 DESCRIPTION ·High DC Current Gain : hFE= 1500(Min.)@ IC= 10A, VCE= 3V ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) APPLICATIONS ·Designed for general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Co

Datasheet: 2SC4323 , 2SC4324 , 2SC4325 , 2SC4326 , 2SC4327 , 2SC4328 , 2SC4329 , 2SC433 , BC237 , 2SC4331 , 2SC4332 , 2SC4333 , 2SC4334 , 2SC4335 , 2SC4336 , 2SC4337 , 2SC4338 .

 
Back to Top

 


2SD1026
  2SD1026
  2SD1026
  2SD1026
 

social 

LIST

Last Update

BJT: 2SA1897 | KRC664E | KRC663E | SMUN5335DW | MP1526 | 3DD5287 | E3150 | 3DD2499 | 3DD4212DT | 2SC9014 | US6H23 | UMH9NFHA | UMH8NFHA | UMH6NFHA | UMH5NFHA | UMH4NFHA | UMH3NFHA | UMH33N | UMH32N | UMH2NFHA |

 

 

 
Back to Top