All Transistors. 2SD1026 Datasheet

 

2SD1026 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD1026
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Collector Current |Ic max|: 15 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 3000
   Noise Figure, dB: -
   Package: TO220

 2SD1026 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD1026 Datasheet (PDF)

 ..1. Size:31K  jmnic
2sd1026.pdf

2SD1026

Product Specification www.jmnic.com2SD1026 Silicon NPN Transistors Features B C E With TO-247 package Darlington transistor Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 100 V VCEO Collector to emitter voltage 100 V VEBO Emitter to base voltage 7 V IB Base current 1 A IC Collector current 15 A PC Collector power di

 ..2. Size:100K  inchange semiconductor
2sd1026.pdf

2SD1026
2SD1026

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1026 DESCRIPTION High DC Current Gain : hFE= 1500(Min.)@ IC= 10A, VCE= 3V High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) APPLICATIONS Designed for general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVC

 8.1. Size:132K  nec
2sd1020.pdf

2SD1026
2SD1026

 8.2. Size:81K  jmnic
2sd1023.pdf

2SD1026
2SD1026

Product Specification www.jmnic.comSilicon Power Transistors 2SD1023 DESCRIPTION DARLINGTON High DC current gain With TO-220 package PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-220) and symbol ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage O

 8.3. Size:80K  jmnic
2sd1025.pdf

2SD1026
2SD1026

Product Specification www.jmnic.com Silicon Power Transistors 2SD1025 DESCRIPTION DARLINGTON With TO-220 package PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 200 V VCEO

 8.4. Size:301K  shindengen
2sd1024.pdf

2SD1026
2SD1026

SHINDENGENDarlington TransistorOUTLINE DIMENSIONS2SD1024 Case : TO-220(T8L10)8A NPNRATINGSUnit : mm

 8.5. Size:211K  inchange semiconductor
2sd1023.pdf

2SD1026
2SD1026

isc Silicon NPN Darlington Power Transistor 2SD1023DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 200V(Min)CEO(SUS)High DC Current Gain: h = 1500(Min) @I = 3AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpoe amplifier applications.ABSOLUTE MAXIMUM RATINGS(T

 8.6. Size:212K  inchange semiconductor
2sd1025.pdf

2SD1026
2SD1026

isc Silicon NPN Darlington Power Transistor 2SD1025DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 200V(Min)CEO(SUS)High DC Current Gain: h = 1500(Min) @I = 5AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpoe amplifier applications.ABSOLUTE MAXIMUM RATINGS(T

 8.7. Size:212K  inchange semiconductor
2sd1022.pdf

2SD1026
2SD1026

isc Silicon NPN Darlington Power Transistor 2SD1022DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)High DC Current Gain: h = 1500(Min) @I = 3AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpoe amplifier applications.ABSOLUTE MAXIMUM RATINGS(T

 8.8. Size:211K  inchange semiconductor
2sd1024.pdf

2SD1026
2SD1026

isc Silicon NPN Darlington Power Transistor 2SD1024DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)High DC Current Gain: h = 1500(Min) @I = 5AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpoe amplifier applications.ABSOLUTE MAXIMUM RATINGS(T

 8.9. Size:134K  inchange semiconductor
2sd1027.pdf

2SD1026
2SD1026

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1027 DESCRIPTION High DC Current Gain : hFE= 1500(Min.)@ IC= 10A, VCE= 3V High Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) APPLICATIONS Designed for general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVC

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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