2SD1047 PDF and Equivalents Search

 

2SD1047 Specs and Replacement

The 2SD1047 is a high-power NPN bipolar junction transistor widely used in audio power amplifiers and high-current switching stages. It features a collector-emitter voltage rating of 140V, continuous collector current up to 12A, and power dissipation around 100W when properly heat-sunk. Its DC current gain typically ranges from 60 to 160, ensuring stable linear amplification. With low saturation voltage and robust SOA performance, the 2SD1047 is well suited for push-pull output stages, offering reliable operation, thermal durability, good frequency response in demanding analog designs.


   Type Designator: 2SD1047
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 140 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 15 MHz
   Collector Capacitance (Cc): 210 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO247
 

 2SD1047 Substitution

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2SD1047 datasheet

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 2sd1047.pdf pdf_icon

2SD1047

2SD1047 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 140 V Typical ft = 20 MHz Fully characterized at 125 oC Application Power supply 3 2 1 Description TO-3P The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain line... See More ⇒

 ..2. Size:125K  sanyo
 2sd1047 2sd1047e.pdf pdf_icon

2SD1047

Ordering number 680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Applications Features Package Dimensions Capable of being mounted easily because of one- unit mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817/2SD1047] Wide ASO because of on-chip ballast re... See More ⇒

 ..3. Size:218K  inchange semiconductor
 2sd1047.pdf pdf_icon

2SD1047

isc Silicon NPN Power Transistor 2SD1047 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Good Linearity of h FE High Current Capability Wide Area of Safe Operation Complement to Type 2SB817 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Recommend for 60W audio frequency amplifier output stage a... See More ⇒

 0.1. Size:30K  sanyo
 2sb817p 2sd1047p 2sd1047p.pdf pdf_icon

2SD1047

Ordering number ENN6572 2SB817P / 2SD1047P 2SB817P PNP Epitaxial Planar Silicon Transistor 2SD1047P NPN Triple Diffused Planar Silicon Transistor 2SB817P / 2SD1047P 140V / 12A, AF80W Output Applications Features Package Dimensions Capable of being mounted easily because of one- unit mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817P... See More ⇒

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Detailed specifications: 2SD1042 , 2SD1043 , 2SD1044 , 2SD1044A , 2SD1045 , 2SD1046 , 2SD1046D , 2SD1046E , TIP41C , 2SD1047O , 2SD1048 , 2SD1048-6 , 2SD1048-7 , 2SD1048-8 , 2SD1049 , 2SD105 , 2SD1050 .

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