2SD1047 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1047
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 15 MHz
Collector Capacitance (Cc): 210 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO247
2SD1047 Transistor Equivalent Substitute - Cross-Reference Search
2SD1047 Datasheet (PDF)
2sd1047.pdf
2SD1047High power NPN epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = 140 V Typical ft = 20 MHz Fully characterized at 125 oCApplication Power supply 321DescriptionTO-3PThe device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain line
2sd1047 2sd1047e.pdf
Ordering number:680FPNP Epitaxial Planar Silicon TransistorsNPN Triple Diffused Planar Silicon Transistors2SB817/2SD1047140V/12A AF 60W Output ApplicationsFeatures Package Dimensions Capable of being mounted easily because of one-unit:mmpoint fixing type plastic molded package (Inter-2022Achangeable with TO-3).[2SB817/2SD1047] Wide ASO because of on-chip ballast re
2sd1047.pdf
isc Silicon NPN Power Transistor 2SD1047DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SB817Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRecommend for 60W audio frequency amplifier outputstage a
2sb817p 2sd1047p 2sd1047p.pdf
Ordering number : ENN65722SB817P / 2SD1047P2SB817P : PNP Epitaxial Planar Silicon Transistor2SD1047P : NPN Triple Diffused Planar Silicon Transistor2SB817P / 2SD1047P140V / 12A, AF80W Output ApplicationsFeaturesPackage Dimensions Capable of being mounted easily because of one- unit : mmpoint fixing type plastic molded package (Inter-2022Achangeable with TO-3).[2SB817P
2sb817c 2sd1047c.pdf
Ordering number : ENN69872SB817C/2SD1047CPNP Epitaxial Planar Silicon TransistorNPN Triple Diffused Planar Silicon Transistor2SB817C/2SD1047C140V / 12A, AF 80W Output ApplicationsFeatures Package Dimensions Large current capacitance. unit : mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process.[2SB817C/2SD1047C]15.63.24.814.02.0
2sd1047d 2sd1047e.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SD1047DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SB817APPLICATIONSRecommend for 60W audio frequency amplifier outputstage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY
2sd1047-247.pdf
isc Silicon NPN Power Transistor 2SD1047DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 140V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SB817Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRecommend for 60W audio frequency amplifier outputstage ap
2sd1047e.pdf
isc Product Specificationisc Silicon NPN Power Transistor 2SD1047EDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOGood Linearity of hFEHigh Current CapabilityWide Area of Safe OperationComplement to Type 2SB817EMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for audio frequency a
Datasheet: 2SD1042 , 2SD1043 , 2SD1044 , 2SD1044A , 2SD1045 , 2SD1046 , 2SD1046D , 2SD1046E , TIP41C , 2SD1047O , 2SD1048 , 2SD1048-6 , 2SD1048-7 , 2SD1048-8 , 2SD1049 , 2SD105 , 2SD1050 .
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BJT: HN1B04FE-Y | HN1B04FE-GR | HN1A01FE-Y | HN1A01FE-GR | 2SC6026MFV-Y | 2SC6026MFV-GR | 2SC5084Y | 2SC5084O | 2SC5066Y | 2SC5066O | 2SC4213-B | 2SC4213-A | 2SC4117GR | 2SC4117BL | 2SC3138-Y | 2SC3138-O | 2SC2713-GR | 2SC2713-BL | 2SA2154CT-Y | 2SA2154CT-GR | 2SA1832Y