2SD1059 PDF and Equivalents Search

 

2SD1059 Specs and Replacement

Type Designator: 2SD1059

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 85 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 15 MHz

Collector Capacitance (Cc): 150 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO220

 2SD1059 Substitution

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2SD1059 datasheet

 8.2. Size:113K  toshiba

2sd1052a.pdf pdf_icon

2SD1059

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒

 8.3. Size:124K  rohm

2sd1055 2sd1766.pdf pdf_icon

2SD1059

Transistors Medium Power Transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M FFeatures FExternal dimensions (Units mm) 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M FStructure Epitaxial planar type NPN silicon transistor (96-217-B24) 256 2SD1766 / ... See More ⇒

 8.4. Size:44K  panasonic

2sd1051 e.pdf pdf_icon

2SD1059

Transistor 2SD1051 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm Complementary to 2SB819 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features High collector to emitter voltage VCEO. Large collector power dissipation PC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.5... See More ⇒

Detailed specifications: 2SD1050, 2SD1051, 2SD1052, 2SD1052A, 2SD1053, 2SD1054, 2SD1055, 2SD1056, A1015, 2SD1060, 2SD1060Q, 2SD1060R, 2SD1060S, 2SD1061, 2SD1061Q, 2SD1061R, 2SD1061S

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