All Transistors. 2N2218S Datasheet

 

2N2218S Datasheet, Equivalent, Cross Reference Search

Type Designator: 2N2218S

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO39

2N2218S Transistor Equivalent Substitute - Cross-Reference Search

 

2N2218S Datasheet (PDF)

4.1. 2n2218al.pdf Size:161K _upd

2N2218S
2N2218S

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com NPN-SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 DEVICES LEVELS 2N2218 2N2219 JAN 2N2218A 2N2219A JANTX 2N2218AL 2N2219AL

4.2. 2n2218x.pdf Size:10K _upd

2N2218S

2N2218X Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 30V dia. IC = 0.8A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1

 4.3. 2n2218ax.pdf Size:11K _upd

2N2218S

2N2218AX Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 40V dia. IC = 0.8A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100)

4.4. 2n2218-2n2219-2n2221-2n2222.pdf Size:71K _st

2N2218S
2N2218S

2N2218-2N2219 2N2221-2N2222 HIGH-SPEED SWITCHES DESCRIPTION The 2N2218, 2N2219, 2N2221 and 2N2222 are sili- con planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature use- ful current gain over a wide range of col

 4.5. 2n2218-a 2n2219-a.pdf Size:56K _central

2N2218S

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

4.6. 2n2218a 19a.pdf Size:208K _cdil

2N2218S
2N2218S

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS 2N2218A 2N2219A TO-39 Switching And Linear Application DC And VHF Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N2218A,19A UNIT Collector -Emitter Voltage VCEO 40 V Collector -Base Voltage VCBO 75 V Emitter -Base Voltage VEBO 6.0 V Col

4.7. 2n2218 2n2219.pdf Size:58K _microsemi

2N2218S
2N2218S

TECHNICAL DATA NPN SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 Devices Qualified Level JAN 2N2218 2N2219 JANTX 2N2218A 2N2219A JANTXV 2N2218AL 2N2219AL JANS MAXIMUM RATINGS 2N2218 2N2218A; L Ratings Symbol Unit 2N2219 2N2219A; L Collector-Emitter Voltage 30 50 Vdc VCEO Collector-Base Voltage 60 75 Vdc VCBO TO- 39* (TO-205AD) Emitter-Base

Datasheet: 2N2216 , 2N2217 , 2N2217-51 , 2N2217A , 2N2218 , 2N2218A , 2N2218AQF , 2N2218AS , BC147 , 2N2219 , 2N2219A , 2N2219AL , 2N2219AQF , 2N2219AS , 2N2219S , 2N222 , 2N2220 .

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