All Transistors. 2SD1089 Datasheet

 

2SD1089 Datasheet and Replacement


   Type Designator: 2SD1089
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TO220
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2SD1089 Datasheet (PDF)

 8.1. Size:111K  mospec
 2sd1088.pdf pdf_icon

2SD1089

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 8.2. Size:56K  no
 2sd1083.pdf pdf_icon

2SD1089

 8.3. Size:180K  inchange semiconductor
 2sd108.pdf pdf_icon

2SD1089

INCHANGE Semiconductorisc Silicon NPN Darlingtion Power Transistor 2SD108DESCRIPTIONHigh DC current gain-: h = 2000 (Min) @ I = 1AFE CCollector-Emitter Sustaining Voltage-: V =80V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingHammer driversSeries and shunt regulatorAudio amplifi

 8.4. Size:212K  inchange semiconductor
 2sd1088.pdf pdf_icon

2SD1089

isc Silicon NPN Darlington Power Transistor 2SD1088DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 250V(Min)CEO(SUS)High DC Current Gain-: h = 2000(Min.)@I = 2AFE CLow Collector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in hig

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Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: KT208I | DRC9143X | BDY12B | 2SD288 | 2SD1007HR | ED1602D | SFE245

Keywords - 2SD1089 transistor datasheet

 2SD1089 cross reference
 2SD1089 equivalent finder
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