All Transistors. 2SD1122 Datasheet

 

2SD1122 Datasheet and Replacement


   Type Designator: 2SD1122
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO220
 

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2SD1122 Datasheet (PDF)

 8.1. Size:282K  hitachi
2sd1127.pdf pdf_icon

2SD1122

 8.2. Size:33K  hitachi
2sd1126.pdf pdf_icon

2SD1122

2SD1126(K)Silicon NPN Triple DiffusedApplicationPower switchingOutlineTO-220AB211. BaseID2. Collector(Flange)13. Emitter 1.5 k 130 23(Typ) (Typ)32SD1126(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 7VCollector current IC

 8.3. Size:65K  wingshing
2sd1128.pdf pdf_icon

2SD1122

2SD1128 NPN SILICON DARLINGTON TRANSISTORSWITCHING REGULATORS PWM INVERTERSSOLENOID AND RELAY DRIVERSTO-220ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 150 V Collector-Emitter Voltage VCEO 100 V Collector Current (DC) IC 5 A Collector Dissipation (Tc=25 PC 30 W Junction Temperature Tj 150

 8.4. Size:208K  inchange semiconductor
2sd1127.pdf pdf_icon

2SD1122

isc Silicon NPN Darlington Power Transistor 2SD1127DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)High DC Current Gain: h = 1000(Min) @I = 10AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)

Datasheet: 2SD1116 , 2SD1117 , 2SD1117A , 2SD1118 , 2SD1119 , 2SD1120 , 2SD1120O , 2SD1121 , 13009 , 2SD1123 , 2SD1124 , 2SD1125 , 2SD1126 , 2SD1126K , 2SD1127 , 2SD1127K , 2SD1128 .

Keywords - 2SD1122 transistor datasheet

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