2SD1122 Todos los transistores

 

2SD1122 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1122

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 80 W

Tensión colector-base (Vcb): 200 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 1000

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de transistor bipolar 2SD1122

 

2SD1122 Datasheet (PDF)

4.1. 2sd1127.pdf Size:282K _hitachi

2SD1122
2SD1122

4.2. 2sd1126.pdf Size:33K _hitachi

2SD1122
2SD1122

2SD1126(K) Silicon NPN Triple Diffused Application Power switching Outline TO-220AB 2 1 1. Base ID 2. Collector (Flange) 1 3. Emitter 1.5 k? 130 ? 2 3 (Typ) (Typ) 3 2SD1126(K) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7V Collector current IC 10 A C

 4.3. 2sd1128.pdf Size:65K _wingshing

2SD1122

2SD1128 NPN SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-220 ABSOLUTE MAXIMUM RATINGS (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 150 V Collector-Emitter Voltage VCEO 100 V Collector Current (DC) IC 5 A Collector Dissipation (Tc=25? PC 30 W ? ? ? Junction Temperature Tj 150 ? ? ? ? ? St

4.4. 2sd1127.pdf Size:228K _inchange_semiconductor

2SD1122
2SD1122

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1127 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 10A ·Low Saturation Voltage APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO C

 4.5. 2sd1126.pdf Size:266K _inchange_semiconductor

2SD1122
2SD1122

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1126 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 5A ·Low Saturation Voltage APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Coll

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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