2SD1125 Datasheet. Specs and Replacement

Type Designator: 2SD1125  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 1000

Noise Figure, dB: -

Package: TO220

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2SD1125 datasheet

 8.1. Size:282K  hitachi

2sd1127.pdf pdf_icon

2SD1125

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 8.2. Size:33K  hitachi

2sd1126.pdf pdf_icon

2SD1125

2SD1126(K) Silicon NPN Triple Diffused Application Power switching Outline TO-220AB 2 1 1. Base ID 2. Collector (Flange) 1 3. Emitter 1.5 k 130 2 3 (Typ) (Typ) 3 2SD1126(K) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7V Collector current IC... See More ⇒

 8.3. Size:65K  wingshing

2sd1128.pdf pdf_icon

2SD1125

2SD1128 NPN SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-220 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 150 V Collector-Emitter Voltage VCEO 100 V Collector Current (DC) IC 5 A Collector Dissipation (Tc=25 PC 30 W Junction Temperature Tj 150... See More ⇒

 8.4. Size:208K  inchange semiconductor

2sd1127.pdf pdf_icon

2SD1125

isc Silicon NPN Darlington Power Transistor 2SD1127 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) High DC Current Gain h = 1000(Min) @I = 10A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 )... See More ⇒

Detailed specifications: 2SD1118, 2SD1119, 2SD1120, 2SD1120O, 2SD1121, 2SD1122, 2SD1123, 2SD1124, TIP42C, 2SD1126, 2SD1126K, 2SD1127, 2SD1127K, 2SD1128, 2SD1129, 2SD113, 2SD1130

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