2SD1183 Datasheet and Replacement
Type Designator: 2SD1183
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 1200 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO3
2SD1183 Substitution
2SD1183 Datasheet (PDF)
2sd1183.pdf

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1183DESCRIPTIONHigh Breakdown Voltage-: V = 1200V (Min)CBOHigh ReliabilityWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
Datasheet: 2SD1177B , 2SD1177C , 2SD1178 , 2SD1179 , 2SD118 , 2SD1180 , 2SD1181 , 2SD1182 , BD140 , 2SD1184 , 2SD1185 , 2SD1186 , 2SD1187 , 2SD1187O , 2SD1187Y , 2SD1188 , 2SD1189 .
History: 2SD1186 | 2SD1184 | K159NT1E | 2SD1182 | 2SD1488 | 2SD1189 | KSA1614Y
Keywords - 2SD1183 transistor datasheet
2SD1183 cross reference
2SD1183 equivalent finder
2SD1183 lookup
2SD1183 substitution
2SD1183 replacement
History: 2SD1186 | 2SD1184 | K159NT1E | 2SD1182 | 2SD1488 | 2SD1189 | KSA1614Y



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