All Transistors. 2SD1185 Datasheet

 

2SD1185 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1185

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 1200 V

Maximum Collector-Emitter Voltage |Vce|: 800 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 175 °C

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO3

2SD1185 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1185 Datasheet (PDF)

1.1. 2sd1185.pdf Size:56K _no

2SD1185

1.2. 2sd1185.pdf Size:114K _inchange_semiconductor

2SD1185
2SD1185

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1185 DESCRIPTION Ў¤ With TO-3 package Ў¤ High breakdown voltage Ў¤ High speed switching APPLICATIONS Ў¤ Power switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO

 4.1. 2sd1187.pdf Size:227K _toshiba

2SD1185
2SD1185



4.2. 2sd1189.pdf Size:135K _rohm

2SD1185

 4.3. 2sd1180.pdf Size:114K _inchange_semiconductor

2SD1185
2SD1185

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1180 DESCRIPTION Ў¤ With TO-126 package Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ Designed for use in audio and radio frequency power amplifiers PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC IC

4.4. 2sd1186.pdf Size:114K _inchange_semiconductor

2SD1185
2SD1185

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1186 DESCRIPTION Ў¤ With TO-3 package Ў¤ High breakdown voltage Ў¤ High speed switching APPLICATIONS Ў¤ Power switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO

 4.5. 2sd1187.pdf Size:240K _inchange_semiconductor

2SD1185
2SD1185

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1187 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 0.5V(Max.) @ IC= 6A ·High Power Dissipation APPLICATIONS ·High power switching applications ·DC-DC converter and DC-AC inverter applications ABSOLUTE MAXIMUM RATIN

Datasheet: 2SC4323 , 2SC4324 , 2SC4325 , 2SC4326 , 2SC4327 , 2SC4328 , 2SC4329 , 2SC433 , BC237 , 2SC4331 , 2SC4332 , 2SC4333 , 2SC4334 , 2SC4335 , 2SC4336 , 2SC4337 , 2SC4338 .

 
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