2SD1185 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

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isc Silicon NPN Power Transistor 2SD1185 DESCRIPTION High Breakdown Voltage- V = 1200V (Min) CBO High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1200 V CBO V Collector-Emitte... See More ⇒

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2sd1766 2sd1758 2sd1862 2sd1189f 2sd1055 2sd1919 2sd1227m.pdf pdf_icon

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2sd1187.pdf pdf_icon

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2sd1186.pdf pdf_icon

isc Silicon NPN Power Transistor 2SD1186 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Collector-Emitte... See More ⇒

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2sd1180.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1180 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 110V (Min) (BR)CEO Low collector saturation voltage With TO-126 package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio and radio frequency power amplifiers applications. ABSOL... See More ⇒

8.6. Size:198K inchange semiconductor

2sd1184.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1184 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Reliability Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V... See More ⇒

8.7. Size:199K inchange semiconductor

2sd1187.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1187 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Collector-Emitter Saturation Voltage- V = 0.5V(Max.)@ I = 6.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications DC-DC ... See More ⇒

8.8. Size:198K inchange semiconductor

2sd1183.pdf pdf_icon

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1183 DESCRIPTION High Breakdown Voltage- V = 1200V (Min) CBO High Reliability Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V... See More ⇒