2SD1187Y Datasheet and Replacement
Type Designator: 2SD1187Y
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 350 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO247
2SD1187Y Substitution
2SD1187Y Datasheet (PDF)
2sd1187.pdf

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1187DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFECollector-Emitter Saturation Voltage-: V = 0.5V(Max.)@ I = 6.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applicationsDC-DC
Datasheet: 2SD1181 , 2SD1182 , 2SD1183 , 2SD1184 , 2SD1185 , 2SD1186 , 2SD1187 , 2SD1187O , 13009 , 2SD1188 , 2SD1189 , 2SD119 , 2SD1190 , 2SD1191 , 2SD1192 , 2SD1193 , 2SD1194 .
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