2SD1187Y Datasheet. Specs and Replacement
Type Designator: 2SD1187Y
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 350 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO247
- BJT ⓘ Cross-Reference Search
2SD1187Y datasheet
7.2. Size:199K inchange semiconductor
2sd1187.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1187 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Collector-Emitter Saturation Voltage- V = 0.5V(Max.)@ I = 6.0A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications DC-DC ... See More ⇒
8.4. Size:202K inchange semiconductor
2sd1186.pdf
isc Silicon NPN Power Transistor 2SD1186 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V Collector-Emitte... See More ⇒
8.5. Size:183K inchange semiconductor
2sd1180.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1180 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 110V (Min) (BR)CEO Low collector saturation voltage With TO-126 package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio and radio frequency power amplifiers applications. ABSOL... See More ⇒
8.6. Size:198K inchange semiconductor
2sd1184.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1184 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Reliability Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V... See More ⇒
8.7. Size:202K inchange semiconductor
2sd1185.pdf
isc Silicon NPN Power Transistor 2SD1185 DESCRIPTION High Breakdown Voltage- V = 1200V (Min) CBO High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1200 V CBO V Collector-Emitte... See More ⇒
8.8. Size:198K inchange semiconductor
2sd1183.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1183 DESCRIPTION High Breakdown Voltage- V = 1200V (Min) CBO High Reliability Wide area of safe operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V... See More ⇒
Detailed specifications: 2SD1181, 2SD1182, 2SD1183, 2SD1184, 2SD1185, 2SD1186, 2SD1187, 2SD1187O, TIP3055, 2SD1188, 2SD1189, 2SD119, 2SD1190, 2SD1191, 2SD1192, 2SD1193, 2SD1194
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