All Transistors. 2SD1187Y Datasheet

 

2SD1187Y Datasheet and Replacement


   Type Designator: 2SD1187Y
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10 MHz
   Collector Capacitance (Cc): 350 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: TO247
 

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2SD1187Y Datasheet (PDF)

 7.1. Size:227K  toshiba
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2SD1187Y

 7.2. Size:199K  inchange semiconductor
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2SD1187Y

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1187DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFECollector-Emitter Saturation Voltage-: V = 0.5V(Max.)@ I = 6.0ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power switching applicationsDC-DC

 8.1. Size:505K  1
 2sd1766 2sd1758 2sd1862 2sd1189f 2sd1055 2sd1919 2sd1227m.pdf pdf_icon

2SD1187Y

 8.2. Size:135K  rohm
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2SD1187Y

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Keywords - 2SD1187Y transistor datasheet

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