All Transistors. 2SD1236 Datasheet

 

2SD1236 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD1236
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 30 W
   Maximum Collector-Base Voltage |Vcb|: 90 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20 MHz
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO220

 2SD1236 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD1236 Datasheet (PDF)

 ..1. Size:126K  sanyo
2sd1236.pdf

2SD1236
2SD1236

 ..2. Size:205K  inchange semiconductor
2sd1236.pdf

2SD1236
2SD1236

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD1236DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 3ACE(sat) CLarge Current Capacity100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers, high-speed inverters,converters,and other general high-curren

 0.1. Size:148K  sanyo
2sd1236l.pdf

2SD1236
2SD1236

Ordering number:1796BPNP/NPN Epitaxial Planar Silicon Transistors2SB920L/2SD1236L80V/5A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2010C[2SB920L/2SD1236L]Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.5V (PNP), 0.4V (NPN) max

 0.2. Size:214K  inchange semiconductor
2sd1236l.pdf

2SD1236
2SD1236

isc Silicon NPN Power Transistors 2SD1236LDESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 3ACE(sat) CLarge Current CapacityComplement to Type 2SB920LMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers, high-speed inverters,converters,and other general high-current switching applic

 8.1. Size:120K  sanyo
2sd1237.pdf

2SD1236
2SD1236

 8.2. Size:151K  sanyo
2sd1230.pdf

2SD1236
2SD1236

Ordering number:1034BPNP/NPN Epitaxial Planar Silicon Darlington Transistors2SB913/2SD1230Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2022A[2SB913/2SD1230]Features High DC current gain. High current capacity and wide ASO. Low saturation voltage.1 : Base2 : Colle

 8.3. Size:117K  sanyo
2sd1235.pdf

2SD1236
2SD1236

Ordering number:1046BPNP/NPN Epitaxial Planar Silicon Transistors2SB919/2SD123530V/8A High-Speed Switching ApplicationsApplications Package Dimensions Large current switching of relay drivers, high-speedunit:mminverters, converters.2010C[2SB919/2SD1235]Features Low collector-to-emitter saturation voltage : VCE(sat)=0.5V (PNP), 0.4V (NPN) max. Large current

 8.4. Size:104K  sanyo
2sd1238l.pdf

2SD1236
2SD1236

Ordering number:1798APNP/NPN Epitaxial Planar Silicon Transistors2SB922L/2SD1238L80V/12A Switching ApplicationsApplications Package Dimensions Suittable for relay drivers, high-speed inverters,unit:mmconverters, and other large-current switching appli-2022Acations.[2SB922L/2SD1238L]Features Low collector-to-emitter saturation voltage : VCE(sat)=0.5V (PNP), 0.4

 8.5. Size:142K  sanyo
2sd1237l.pdf

2SD1236
2SD1236

Ordering number:1797BPNP/NPN Epitaxial Planar Silicon Transistors2SB921L/2SD1237L80V/7A Switching ApplicationsApplications Package Dimensions Suitable for relay drivers, high-speed inverters,unit:mmconverters, and other genral large current switching2010Capplications.[2SB921L/2SD1237L]Features Low collector-to-emitter saturation voltage : VCE(sat)=0.5V (PNP),

 8.6. Size:240K  inchange semiconductor
2sd1237.pdf

2SD1236
2SD1236

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD1237DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 4ACE(sat) CLarge Current CapacityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers, high-speed inverters,converters,and other general high-current switching applications.

 8.7. Size:217K  inchange semiconductor
2sd1230.pdf

2SD1236
2SD1236

isc Silicon NPN Darlington Power Transistor 2SD1230DESCRIPTIONHigh DC Current Gain: h = 1500(Min.)@ I = 4A, V = 3VFE C CECollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEOComplement to Type 2SB913Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers, printer hammer drivers, relaydriver

 8.8. Size:181K  inchange semiconductor
2sd1239.pdf

2SD1236
2SD1236

isc Product Specificationisc Silicon NPN Power Transistor 2SD1239DESCRIPTIONHigh Current CapabilityExcellent Safe Operating AreaFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsPower amplifiers .Absolute maximum ratings(Ta=25)SYMBOL PARAMETER VALUE

 8.9. Size:214K  inchange semiconductor
2sd1235.pdf

2SD1236
2SD1236

isc Silicon NPN Power Transistors 2SD1235DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 3ACE(sat) CLarge Current CapacityComplement to Type 2SB919Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLarge current switching of relay drivers, high-speedinverters,converters.ABSOLUTE MAXIMUM RATINGS(T =25)

 8.10. Size:218K  inchange semiconductor
2sd1238l.pdf

2SD1236
2SD1236

isc Silicon NPN Power Transistors 2SD1238LDESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 6ACE(sat) CWide Area of Safe OperationComplement to Type 2SB922LMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers , high-speed inverters,converters,and other general high-current switching

 8.11. Size:212K  inchange semiconductor
2sd1238.pdf

2SD1236
2SD1236

isc Silicon NPN Power Transistors 2SD1238DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 6ACE(sat) CWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers , high-speed inverters,converters,and other general high-current switchingapplicationsABSOLUTE MAXIMUM

 8.12. Size:214K  inchange semiconductor
2sd1237l.pdf

2SD1236
2SD1236

isc Silicon NPN Power Transistors 2SD1237LDESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I = 4ACE(sat) CLarge Current CapacityComplement to Type 2SB921LMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers, high-speed inverters,converters,and other general high-current switching applic

 8.13. Size:206K  inchange semiconductor
2sd1233.pdf

2SD1236
2SD1236

isc Silicon NPN Darlington Power Transistor 2SD1233DESCRIPTIONHigh DC Current Gain: h = 1500(Min.)@ I = 4A, V = 3VFE C CECollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for motor drivers, printer hammer drivers, relaydrivers, voltage regulator control

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: KRC825E

 

 
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