All Transistors. 2SD1241A Datasheet

 

2SD1241A Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1241A

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 60 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector Current |Ic max|: 5 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO247

2SD1241A Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1241A Datasheet (PDF)

4.1. 2sd1247.pdf Size:88K _sanyo

2SD1241A
2SD1241A

Ordering number:1029C PNP/NPN Epitaxial Planar Silicon Transistors 2SB927/2SD1247 Large-Current Driving Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers, electrical unit:mm equipment. 2006A [2SB927/2SD1247] Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO. ( ) : 2SB927 EIAJ : SC-

4.2. 2sd1246.pdf Size:85K _sanyo

2SD1241A
2SD1241A

Ordering number:1030E PNP/NPN Epitaxial Planar Silicon Transistors 2SB926/2SD1246 Large-Current Driving Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers, electrical unit:mm equipment. 2003A [2SB926/2SD1246] Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO. JEDEC : TO-92 B : Base

 4.3. 2sd1244.pdf Size:40K _panasonic

2SD1241A
2SD1241A

Transistor 2SD1244 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. M type package allowing easy automatic and manual insertion as 0.85 well as stand-alone fixi

4.4. 2sd1244 e.pdf Size:44K _panasonic

2SD1241A
2SD1241A

Transistor 2SD1244 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. M type package allowing easy automatic and manual insertion as 0.85 well as stand-alone fixi

 4.5. 2sd1243.pdf Size:88K _inchange_semiconductor

2SD1241A
2SD1241A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1243 DESCRIPTION ·With TO-3PN package ·Wide area of safe operation APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum r

4.6. 2sd1248.pdf Size:260K _inchange_semiconductor

2SD1241A
2SD1241A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1248 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 4A ·Low Collector Saturation Voltage APPLICATIONS ·Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAME

Datasheet: 2N3187 , 2N3188 , 2N3189 , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , TIP122 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 .

 
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