All Transistors. 2N2222DCSM Datasheet

 

2N2222DCSM Transistor. Datasheet pdf. Equivalent

Type Designator: 2N2222DCSM

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.6 W

Maximum Collector-Base Voltage |Vcb|: 75 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.8 A

Max. Operating Junction Temperature (Tj): 175 °C

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: LCC3

2N2222DCSM Transistor Equivalent Substitute - Cross-Reference Search

2N2222DCSM Datasheet (PDF)

4.1. mtp2n2222a.pdf Size:238K _motorola

2N2222DCSM
2N2222DCSM

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by P2N2222A/D Amplifier Transistors NPN Silicon P2N2222A COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector–Emitter Voltage VCEO 40 Vdc 3 Collector–Base Voltage VCBO 75 Vdc CASE 29–04, STYLE 17 Emitter–Base Voltage VEBO 6.0 Vdc TO–92 (TO–226AA) Collector Current — Continuous IC 600 mAdc

4.2. p2n2222a.pdf Size:238K _motorola

2N2222DCSM
2N2222DCSM

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by P2N2222A/D Amplifier Transistors NPN Silicon P2N2222A COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector–Emitter Voltage VCEO 40 Vdc 3 Collector–Base Voltage VCBO 75 Vdc CASE 29–04, STYLE 17 Emitter–Base Voltage VEBO 6.0 Vdc TO–92 (TO–226AA) Collector Current — Continuous IC 600 mAdc

4.3. 2n2222_2n2222a_cnv_2.pdf Size:53K _philips

2N2222DCSM
2N2222DCSM

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2222; 2N2222A NPN switching transistors 1997 May 29 Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN switching transistors 2N2222; 2N2222A FEATURES PINNING • High current (max. 800 mA) PIN DESCRIPTION • Low voltage (max. 40 V). 1 emitter 2 ba

4.4. 2n2218-2n2219-2n2221-2n2222.pdf Size:71K _st

2N2222DCSM
2N2222DCSM

2N2218-2N2219 2N2221-2N2222 HIGH-SPEED SWITCHES DESCRIPTION The 2N2218, 2N2219, 2N2221 and 2N2222 are sili- con planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature use- ful current gain over a wide range of col

4.5. 2n2219a_2n2222a.pdf Size:166K _st

2N2222DCSM
2N2222DCSM

2N2219A 2N2222A ® HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage cur

4.6. 2n2222a_2n2219a.pdf Size:168K _st

2N2222DCSM
2N2222DCSM

2N2219A 2N2222A ® HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage cur

4.7. 2n2221a_2n2222a.pdf Size:116K _central

2N2222DCSM
2N2222DCSM

DATA SHEET 2N2221A 2N2222A NPN SILICON TRANSISTOR JEDEC TO-18 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2221A, 2N2222A types are Silicon NPN Planar Epitaxial Transistors designed for small signal general purpose and switching applications. MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO

4.8. 2n2222_2n2222a(to-18).pdf Size:232K _mcc

2N2222DCSM
2N2222DCSM

MCC 2N2222 Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2N2222A Phone: (818) 701-4933 Fax: (818) 701-4939 Features • High current (max.800mA) • Low voltage (max.40V) NPN Switching • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates Transistors RoHS Compliant. See ordering information) Maximum Ratings Symbol Ra

4.9. p2n2222a-d.pdf Size:164K _onsemi

2N2222DCSM
2N2222DCSM

P2N2222A Amplifier Transistors NPN Silicon Features • These are Pb--Free Devices* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS (TA =25°C unless otherwise noted) Characteristic Symbol Value Unit 2 BASE Collector--Emitter Voltage VCEO 40 Vdc Collector--Base Voltage VCBO 75 Vdc 3 Emitter--Base Voltage VEBO 6.0 Vdc EMITTER Collector Current -- Continuous IC 600 mAdc Total Device Dis

4.10. 2n2222aub.pdf Size:250K _optek

2N2222DCSM
2N2222DCSM

Product Bulletin JANTX, JANTXV, 2N2222AUB September 1996 Surface Mount NPN General Purpose Transistor Type JANTX, JANTXV, 2N2222AUB Feature Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Collector-Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 V •Ceramic surface mount package Collector-Emitter Voltage. . . . . . . . .

4.11. 2n2222aua.pdf Size:186K _optek

2N2222DCSM
2N2222DCSM

4.12. p2n2222_a.pdf Size:240K _cdil

2N2222DCSM
2N2222DCSM

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR SWITCHING TRANSISTORS P2N2222 P2N2222A EBC TO-92 Complementary Silicon Transistors For Switching And Linear Applications DC Amplifier & Driver For Industrial Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL 2222 2222A UNIT Collecto

4.13. 2n2222au.pdf Size:326K _first_silicon

2N2222DCSM
2N2222DCSM

SEMICONDUCTOR 2N2222AU TECHNICAL DATA General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC-323/SC-70 package which 3 is designed for low power surface mount applications. Features 1 2 compliance with RoHS requirements. • We declare that the material of product SC-70 / SOT– 323 ORDERING INFO

4.14. 2n2222ae.pdf Size:462K _first_silicon

2N2222DCSM
2N2222DCSM

SEMICONDUCTOR 2N2222AE TECHNICAL DATA General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier 3 applications. They are housed in the SC-89 package which is designed for low power surface mount applications. 1 Features 2 compliance with RoHS requirements. • We declare that the material of product SC-89 ORDERING INFORMATION COLLECTOR

4.15. 2n2222as.pdf Size:446K _first_silicon

2N2222DCSM
2N2222DCSM

SEMICONDUCTOR 2N2222AS TECHNICAL DATA General Purpose Transistor NPN Silicon 3 compliance with RoHS requirements. • We declare that the material of product 2 1 ORDERING INFORMATION † SOT–23 Device Maring Shipping 2N2222AS 1P 3000 / Tape & Reel COLLECTOR 3 1 MAXIMUM RATINGS (TA = 25°C) BASE Rating Symbol Max Unit 2 Collector-Emitter Voltage VCEO 40 Vdc EMITTER Col

4.16. 2n2221a_2n2221al_2n2221aua_2n2221aub_2n2222a_2n2222al_2n2222aua_2n2222aub.pdf Size:377K _aeroflex

2N2222DCSM
2N2222DCSM

Radiation Hardened NPN Silicon Switching Transistors 2N2221A, 2N2221AL, 2N2221AUA, 2N2221AUB 2N2222A, 2N2222AL, 2N2222AUA, 2N2222AUB Features • Qualified to MIL-PRF-19500/255 • Levels: Commerical JANS JANSM-3K Rads (Si) JANSD-l0K Rads (Si) JANSP-30K Rads (Si) JANSL-50K Rads (Si) JANSR-l00K Rads (Si) • TO-18 (TO-206AA), Surface mount UA & UB Packages Absolute Maximum Ra

Datasheet: 2N2222A , 2N2222ACSM , 2N2222ACSM4 , 2N2222ADCSM , 2N2222AQCSM , 2N2222AQF , 2N2222AUB , 2N2222CSM , TIP3055 , 2N2223 , 2N2223A , 2N2223L , 2N2224 , 2N2225 , 2N2226 , 2N2227 , 2N2228 .

 


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