All Transistors. 2SD1257A Datasheet

 

2SD1257A Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1257A

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 30 MHz

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO251

2SD1257A Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1257A Datasheet (PDF)

1.1. 2sd1257a.pdf Size:1268K _kexin

2SD1257A
2SD1257A

SMD Type Transistors NPN Transistors 2SD1257A TO-252 Unit: mm +0.15 6.50-0.15 +0.1 ■ Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ● Satisfactory linearity of foward current transfer ratio hFE ● Low collector to emitter saturation voltage VCE(sat) ● Large collector current IC 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3

3.1. 2sd1257.pdf Size:62K _panasonic

2SD1257A
2SD1257A

Power Transistors 2SD1257, 2SD1257A Silicon NPN epitaxial planar type Unit: mm For power switching 8.5 0.2 3.4 0.3 6.0 0.5 1.0 0.1 Complementary to 2SB934 Features Low collector to emitter saturation voltage VCE(sat) 1.5max. 1.1max. Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 0.8 0.1 0.5max. N type package enabling direct soldering of t

3.2. 2sd1257.pdf Size:861K _kexin

2SD1257A
2SD1257A

SMD Type Transistors NPN Transistors 2SD1257 TO-252 Unit: mm +0.15 6.50-0.15 +0.1 ■ Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ● Satisfactory linearity of foward current transfer ratio hFE ● Low collector to emitter saturation voltage VCE(sat) ● Large collector current IC 0.127 +0.1 ● Complementary to 2SB934 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15

Datasheet: 2N3187 , 2N3188 , 2N3189 , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , TIP122 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 .

 
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