2SD128 Datasheet and Replacement
Type Designator: 2SD128
Material of Transistor: Ge
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 32 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO1
2SD128 Datasheet (PDF)
2sd1280 e.pdf

Transistor2SD1280Silicon NPN epitaxial planer typeFor low-voltage type medium output power amplificationUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with the45low-voltage power supply.Mini Power type package, allowing downsizing of the equipment0.4 0.08and
2sd1280.pdf

Transistor2SD1280Silicon NPN epitaxial planer typeFor low-voltage type medium output power amplificationUnit: mm1.5 0.14.5 0.11.6 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with the45low-voltage power supply.Mini Power type package, allowing downsizing of the equipment0.4 0.08and
Datasheet: 2SD1275A , 2SD1276 , 2SD1276A , 2SD1277 , 2SD1277A , 2SD1278 , 2SD1279 , 2SD127A , BD777 , 2SD1280 , 2SD1281 , 2SD1282 , 2SD1283 , 2SD1284 , 2SD1286 , 2SD1287 , 2SD1288 .
Keywords - 2SD128 transistor datasheet
2SD128 cross reference
2SD128 equivalent finder
2SD128 lookup
2SD128 substitution
2SD128 replacement
History: 2SC292 | GI3711



LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2sc539 | 2n5401 transistor equivalent | p0903bdg | c1384 transistor | 2sc1175 | 2sc632 | mje15030 transistor equivalent | 13003b