2SD128 Datasheet. Specs and Replacement

Type Designator: 2SD128  📄📄 

Material of Transistor: Ge

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 32 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO1

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2SD128 datasheet

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Transistor 2SD1280 Silicon NPN epitaxial planer type For low-voltage type medium output power amplification Unit mm 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the 45 low-voltage power supply. Mini Power type package, allowing downsizing of the equipment 0.4 0.08 and ... See More ⇒

 0.3. Size:48K  panasonic

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2SD128

Transistor 2SD1280 Silicon NPN epitaxial planer type For low-voltage type medium output power amplification Unit mm 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the 45 low-voltage power supply. Mini Power type package, allowing downsizing of the equipment 0.4 0.08 and ... See More ⇒

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Detailed specifications: 2SD1275A, 2SD1276, 2SD1276A, 2SD1277, 2SD1277A, 2SD1278, 2SD1279, 2SD127A, BD333, 2SD1280, 2SD1281, 2SD1282, 2SD1283, 2SD1284, 2SD1286, 2SD1287, 2SD1288

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