2SD128 Datasheet. Specs and Replacement
Type Designator: 2SD128 📄📄
Material of Transistor: Ge
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 32 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 1 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO1
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2SD128 Substitution
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2SD128 datasheet
Transistor 2SD1280 Silicon NPN epitaxial planer type For low-voltage type medium output power amplification Unit mm 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the 45 low-voltage power supply. Mini Power type package, allowing downsizing of the equipment 0.4 0.08 and ... See More ⇒
Transistor 2SD1280 Silicon NPN epitaxial planer type For low-voltage type medium output power amplification Unit mm 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the 45 low-voltage power supply. Mini Power type package, allowing downsizing of the equipment 0.4 0.08 and ... See More ⇒
Detailed specifications: 2SD1275A, 2SD1276, 2SD1276A, 2SD1277, 2SD1277A, 2SD1278, 2SD1279, 2SD127A, BD333, 2SD1280, 2SD1281, 2SD1282, 2SD1283, 2SD1284, 2SD1286, 2SD1287, 2SD1288
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