All Transistors. 2SD1363R Datasheet

 

2SD1363R Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1363R

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 7 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 10 MHz

Collector Capacitance (Cc): 250 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: TO220

2SD1363R Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1363R Datasheet (PDF)

4.1. rej03g0786 2sd1368ds-1.pdf Size:110K _renesas

2SD1363R
2SD1363R

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.2. 2sd1366.pdf Size:31K _hitachi

2SD1363R
2SD1363R

2SD1366 Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1366 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5V Collector current IC 1A Collector peak current iC(peak

 4.3. 2sd1368.pdf Size:24K _hitachi

2SD1363R
2SD1363R

2SD1368 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1002 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1368 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 6V Collector current

4.4. 2sd1367.pdf Size:31K _hitachi

2SD1363R
2SD1363R

2SD1367 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1001 Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1367 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 16 V Emitter to base voltage VEBO 6V Collector current

 4.5. 2sd1360.pdf Size:191K _inchange_semiconductor

2SD1363R
2SD1363R

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1360 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 400V(Min) (BR)CEO ·Collector-Emitter Saturation Voltage- : V = 2.0V(Max) @I = 4A CE(sat) C ·High DC Current Gain : h = 600(Min) @ I = 2A, V = 2V FE C CE ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliabl

4.6. 2sd1365.pdf Size:201K _inchange_semiconductor

2SD1363R
2SD1363R

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1365 DESCRIPTION ·High Collector-Base Voltage : V = 800V(Min) (BR)CBO ·Low Collector Saturation Voltage- : V = 1.5V(Max)@ I = 2A CE(sat) C ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Motor control systems. ·Power ampli

4.7. 2sd1361.pdf Size:188K _inchange_semiconductor

2SD1363R
2SD1363R

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1361 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 250V(Min) (BR)CEO ·Collector-Emitter Saturation Voltage- : V = 2.0V(Max) @I = 4A CE(sat) C ·High DC Current Gain : h = 2000(Min) @ I = 2A, V = 2V FE C CE ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliab

4.8. 2sd1362.pdf Size:207K _inchange_semiconductor

2SD1363R
2SD1363R

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1362 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 80V(Min) (BR)CEO ·Collector Power Dissipation- : P = 40W@ T = 25℃ C C ·Low Collector Saturation Voltage- : V = 0.5V(Max)@ I = 4A CE(sat) C ·Complement to Type 2SB992 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLI

4.9. 2sd1366.pdf Size:883K _kexin

2SD1363R
2SD1363R

SMD Type Transistors NPN Transistors 2SD1366 1.70 0.1 ■ Features ● Low frequency power amplifier ● Complementary to 2SB1000 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 5 Collector Current - Continu

4.10. 2sd1368.pdf Size:400K _kexin

2SD1363R
2SD1363R

SMD Type Transistors NPN Transistors 2SD1368 1.70 0.1 ■ Features ● Low frequency power amplifier ● Complementary to 2SB1002 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 6 Collector Current - Contin

4.11. 2sd1367.pdf Size:865K _kexin

2SD1363R
2SD1363R

SMD Type Transistors NPN Transistors 2SD1367 ■ Features 1.70 0.1 ● Low frequency power amplifier ● Complementary to 2SB1001 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 16 V Emitter - Base Voltage VEBO 6 Collector Current - Continuo

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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