2SD1407G Specs and Replacement
Type Designator: 2SD1407G
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 12 MHz
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO220F
2SD1407G Substitution
2SD1407G datasheet
2sd1407a.pdf
2SD1407A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1407A Industrial Applications Power Amplifier Applications Unit mm High breakdown voltage VCEO = 100 V Low collector saturation voltage VCE (sat) = 2.0 V (max) Complementary to 2SB1016A Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Col... See More ⇒
2sd1407.pdf
isc Silicon NPN Power Transistor 2SD1407 DESCRIPTION Low Collector Saturation Voltage V = 2.0V(Max)@ I = 4A CE(sat) C Collector-Emitter Breakdown Voltage- V = 100V (Min) (BR)CEO Complement to Type 2SB1016 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T... See More ⇒
Detailed specifications: 2SD1405GR , 2SD1405V , 2SD1406 , 2SD1406G , 2SD1406GR , 2SD1406O , 2SD1406Y , 2SD1407 , 2N2907 , 2SD1407O , 2SD1407R , 2SD1407Y , 2SD1408 , 2SD1408O , 2SD1408R , 2SD1408Y , 2SD1409 .
History: 2N2919A
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