2SD1409O Datasheet and Replacement
Type Designator: 2SD1409O
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 600 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 35 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Noise Figure, dB: -
Package: TO220F
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2SD1409O Datasheet (PDF)
2sd1409.pdf

2SD1409 SILICON NPN DARLINGTON TRANSISTORGENERAL DESCRIPTIONDarington transistor are designed for use as general purpose amplifiers, switching and motor control applications.QUICK REFERENCE DATATO-220FSYMBOL PARAMETER CONDITIONS MIN MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 600 VCollector-emitter voltage (open base)VCEO - 400 VCollector current (DC)I
2sd1409.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1409 DESCRIPTION With TO-220F package High DC current gain Monolithic construction with built-in base-emitter shunt resistor APPLICATIONS Igniter applications High volitage switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and sym
2sd1409a.pdf

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Darlington Power Transistor 2SD1409ADESCRIPTIONHigh collector-emitter breakdown voltage-: V = 400V(Min)(BR)CEOHigh DC current Gain: h = 600(Min) @ I = 2A, V = 2VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIgniter applicationsHigh voltage swi
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: ZXT10N50DE6 | 2SC3993M | KTC4527F | C742 | BFX57II | CA3081EX | CMST5087
Keywords - 2SD1409O transistor datasheet
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History: ZXT10N50DE6 | 2SC3993M | KTC4527F | C742 | BFX57II | CA3081EX | CMST5087



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