All Transistors. 2SD1409O Datasheet

 

2SD1409O Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD1409O
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 35 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO220F

 2SD1409O Transistor Equivalent Substitute - Cross-Reference Search

   

2SD1409O Datasheet (PDF)

 7.1. Size:212K  toshiba
2sd1409a.pdf

2SD1409O
2SD1409O

 7.2. Size:71K  wingshing
2sd1409.pdf

2SD1409O

2SD1409 SILICON NPN DARLINGTON TRANSISTORGENERAL DESCRIPTIONDarington transistor are designed for use as general purpose amplifiers, switching and motor control applications.QUICK REFERENCE DATATO-220FSYMBOL PARAMETER CONDITIONS MIN MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 600 VCollector-emitter voltage (open base)VCEO - 400 VCollector current (DC)I

 7.3. Size:105K  jmnic
2sd1409.pdf

2SD1409O
2SD1409O

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1409 DESCRIPTION With TO-220F package High DC current gain Monolithic construction with built-in base-emitter shunt resistor APPLICATIONS Igniter applications High volitage switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and sym

 7.4. Size:191K  inchange semiconductor
2sd1409a.pdf

2SD1409O
2SD1409O

INCHANGE Semiconductor isc Product Specificationisc Silicon NPN Darlington Power Transistor 2SD1409ADESCRIPTIONHigh collector-emitter breakdown voltage-: V = 400V(Min)(BR)CEOHigh DC current Gain: h = 600(Min) @ I = 2A, V = 2VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIgniter applicationsHigh voltage swi

 7.5. Size:213K  inchange semiconductor
2sd1409.pdf

2SD1409O
2SD1409O

isc Silicon NPN Darlington Power Transistor 2SD1409DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh DC Current Gain: h = 600(Min) @ I = 2A, V = 2VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIgniter applicationsHigh voltage switching applicationsABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 3DD303C

 

 
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