2SD1409O Datasheet and Replacement

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2SD1409 SILICON NPN DARLINGTON TRANSISTOR GENERAL DESCRIPTION Darington transistor are designed for use as general purpose amplifiers, switching and motor control applications. QUICK REFERENCE DATA TO-220F SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 600 V Collector-emitter voltage (open base) VCEO - 400 V Collector current (DC) I... See More ⇒

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1409 DESCRIPTION With TO-220F package High DC current gain Monolithic construction with built-in base-emitter shunt resistor APPLICATIONS Igniter applications High volitage switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and sym... See More ⇒

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1409A DESCRIPTION High collector-emitter breakdown voltage- V = 400V(Min) (BR)CEO High DC current Gain h = 600(Min) @ I = 2A, V = 2V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Igniter applications High voltage swi... See More ⇒

isc Silicon NPN Darlington Power Transistor 2SD1409 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High DC Current Gain h = 600(Min) @ I = 2A, V = 2V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Igniter applications High voltage switching applications ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒